|
|
PDF G4BC20U Data sheet ( Hoja de datos )
| Número de pieza | G4BC20U | |
| Descripción | IRG4BC20U | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de G4BC20U (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PD - 91448D
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20U
UltraFast Speed IGBT
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
G
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
13
6.5
52
52
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
1
4/17/2000
1 page  
IRG4BC20U
1000
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SH OR TE D
C res = C gc
800 C oes = C ce + C gc
C ie s
600
Coes
400
C re s
200
0A
1 10 100
VCE, C olle ctor-to-Em itte r Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 6.5A
16
12
8
4
0
0 5 10 15 20 25
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
30
0.23
VCC = 480V
VGE = 15V
T J = 25°C
I C = 6.5A
0.22
0.21
0.20
0
10 20 30 40 50
R G , Gate Resistance (Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
IC = 13A
IC = 6.5A
IC = 3.3A
0.1
RG = 50 Ω
VGE = 15V
VCC = 480V
0.01
-60 -40 -20 0
A
20 40 60 80 100 120 140 160
TJ , Ju n c tio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G4BC20U.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| G4BC20F | IRG4BC20F | International Rectifier |
| G4BC20FD | IRG4BC20FD | International Rectifier |
| G4BC20KD | IRG4BC20KD | International Rectifier |
| G4BC20U | IRG4BC20U | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |