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PDF AMMP-6530 Data sheet ( Hoja de datos )

Número de pieza AMMP-6530
Descripción 5-30 GHz Image Reject Mixer
Fabricantes AVAGO 
Logotipo AVAGO Logotipo



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AMMP-6530
5–30 GHz Image Reject Mixer
Data Sheet
Description
Avago Technologies’ AMMP-6530 is an image reject
mixer that operates from 5 GHz to 30 GHz. The cold
channel FET mixer is designed to be an easy-to-use
component for any surface mount PCB application. It
can be used drain pumped for low conversion loss ap-
plications, or when gate pumped the mixer can provide
high linearity for SSB up-conversion. An external 90-de-
gree hybrid is used to achieve image rejection and a
-1V voltage reference is needed. Intended applica-
tions include microwave radios, 802.16, VSAT, and
satellite receivers. Since this one mixer can cover
several bands, the AMMP-6530 can reduce part inven-
tory. The integrated mixer eliminates complex tuning
and assembly processes typically required by hybrid
(discrete-FET or diode) mixers. The package is fully SMT
compatible with backside grounding and I/O to simplify
assembly.
Package Diagram
Features
5x5 mm Surface Mount Package
Broad Band Performance 5– 30 GHz
Low Conversion Loss of 8 dB
High Image Rejection of 15–20 dB
Good 3rd Order Intercept of +18 dBm
Single -1V, no current Supply Bias
Applications
Microwave Radio Systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20 WiMax)
WLL and MMDS loops
Functional Block Diagram
IF1 NC IF2
1 23
RF/LO 8
4 LO/RF
765
NC Vg NC
NC
7
Vg
6
NC
5
8
drain
IF1
1
NC
2
IF2
3
gate
4
Pin Function
1 IF1
2
3 IF2
4 LO/RF
5
6 Vg
7
8 RF/LO
Top view
package base: GND
RoHS-Exemption
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Mode (Class A): 40V
ESD Human Body Model (Class 0): 200V
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Please refer to hazardous substances table on page 8.
Note: MSL Rating - Level 2A

1 page




AMMP-6530 pdf
AMMP-6530 Typical Performance under Gate Pumped Up Conversion Operation (TA = 25°C, Vg = -1V, Zo=50Ω)
LO
4
gate
LSB 3
IF2
2
NC
USB 1
IF1
5
NC
6
Vg
7
NC
-1V
drain
8
RF
0
-5
USB (dB)
LSB (dB)
-10
-15
-20
-25
-30
-35
-40
-45
-50
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 11. Up-conversion Gain with IF terminated for Low Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
0
-5
-10
-15
-20
-25
-30
-35
-40
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 13. LO-RF Up-conversion Isolation.
0
-5
USB (dB)
LSB (dB)
-10
-15
-20
-25
-30
-35
-40
-45
-50
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 12. Up-conversion Gain wth IF terminated for High Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
-5
-7
-9
-11
-13
-15
0 2 4 6 8 10 12 14 16 18 20
PLO=PIF (dB)
Figure 14. Up-conversion Gain vs. Pumping Power.
LO power=IF power, IF=1 GHz, RF=25 GHz.
5

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