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PDF AMMC-6530 Data sheet ( Hoja de datos )
| Número de pieza | AMMC-6530 | |
| Descripción | 5-30 GHz Image Reject Mixer | |
| Fabricantes | Agilent | |
| Logotipo |  |
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Agilent AMMC-6530
5– 30 GHz Image Reject Mixer
Data Sheet
Description
Agilent’s AMMC-6530 is an image
reject mixer that operates from
5 to 30 GHz. The cold channel
FET mixer is designed to be an
easy-to-use component for any
chip and wire application. It can
be used drain pumped for low
conversion loss applications, or
when gate pumped the mixer can
provide high linearity for SSB
up-conversion. An external
90-degree hybrid is used to
achieve image rejection and a -1V
voltage reference is needed.
Intended applications include
microwave radios, 802.16, VSAT,
and satellite receivers. Since this
one mixer can cover several
bands, the AMMC-6530 can
reduce part inventory. The
integrated mixer eliminates
complex tuning and assembly
processes typically required by
hybrid (discrete-FET or diode)
mixers. For improved reliability
and moisture protection, the die
is passivated at the active areas.
Features
• Broad Band Performance 5– 30 GHz
• Low Conversion Loss of 8 dB
• High Image Rejection of 15 – 20 dB
• Good 3rd Order Intercept of
+18 dBm
• Single -1V, no current Supply Bias
Chip Size: 1300 x 1400 µm
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Vg drain
IF1
Applications
• Microwave Radio Systems
• Satellite VSAT, DBS Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access
(including 802.16 and 802.20
WiMax)
• WLL and MMDS loops
• Commercial grade military
IF2
gate
Vg
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min. Max.
Vg Gate Supply Voltage
V 0 -3
Pin CW Input Power
dBm 25
Tch Operating Channel Temperature
°C
+150
Tstg Storage Case Temperature
°C -65 +150
Tmax Max. Assembly Temp (60 sec max) °C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
1 page  
AMMC-6530 Typical Performance under Gate Pumped Up Conversion
Operation (TA = 25°C, Vg = -1V, Zo=50Ω)
LO
LSB
-1V
Vg
gate
IF2
USB
IF1
drain
Vg
RF
0
-5 USB (dB)
LSB (dB)
-10
-15
-20
-25
-30
-35
-40
-45
-50
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 11. Up-conversion Gain with IF
terminated for Low Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
0
-5
-10
-15
-20
-25
-30
-35
-40
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 13. LO-RF Up-conversion Isolation.
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
5
USB (dB)
LSB (dB)
10 15 20 25
FREQUENCY (GHz)
Figure 12. Up-conversion Gain wth IF
terminated for High Side Conversion.
LO=+5 dBm, IF=+5 dBm, IF=1 GHz.
30
-5
-7
-9
-11
-13
-15
0 2 4 6 8 10 12 14 16 18 20
PLO=PIF (dB)
Figure 14. Up-conversion Gain vs. Pumping
Power. LO power=IF power, IF=1 GHz,
RF=25 GHz.
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AMMC-6530.PDF ] | |
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