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Número de pieza | ATF-501P8 | |
Descripción | High Linearity Enhancement Mode Pseudomorphic HEMT | |
Fabricantes | AVAGO | |
Logotipo | ||
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No Preview Available ! ATF-501P8
High Linearity Enhancement Mode[1]
Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’s ATF-501P8 is a single-voltage
high linearity, low noise E-pHEMT housed in an 8-
lead JEDEC-standard leadless plastic chip carrier
(LPCC[3]) package. The device is ideal as a medium-
power amplifier. Its operating frequency range is from
400 MHz to 3.9 GHz.
The thermally efficient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual
evidence of solder reflow. The device has a Point
MTTF of over 300 years at a mounting temperature
of +85ºC. All devices are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating
the need of negative gate voltage associated with conventional depletion
mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.
Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• Small package size: 2.0 x 2.0 x 0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
Specifications
• 2 GHz; 4.5V, 280 mA (Typ.)
• 45.5 dBm Output IP3
• 29 dBm Output Power at 1dB gain compression
• 1 dB Noise Figure
• 15 dB Gain
• 14.5 dB LFOM[4]
• 65% PAE
• 23oC/W thermal resistance
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
0Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Pin 5
Top View
Note:
Package marking provides orientation and identification:
“0P” = Device Code
“x” = Date code indicates the month of manufacture.
Applications
• Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier
for Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/RLL and MMDS
applications
• General purpose discrete E-pHEMT for other high linearity
applications
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
1 page ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 280 mA
55 55
4.5V 4.5V
5.5V 5.5V
50 3.5V 50 3.5V
45 45
40 40
35 35
30
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 8. OIP3 vs. Idq and Vds at 2 GHz.
30
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 9. OIP3 vs. Idq and Vds at 0.9 GHz.
35
30
25
4.5V
5.5V
20 3.5V
15
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 10. P1dB vs. Idq and Vds at 2 GHz.
35
30
25
4.5V
5.5V
20 3.5V
15
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 11. P1dB vs. Idq and Vds at 0.9 GHz.
25
4.5V
5.5V
20 3.5V
15
10
5
0
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 12. Gain vs. Idq and Vds at 2 GHz.
25
4.5V
5.5V
20 3.5V
15
10
5
0
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 13. Gain vs. Idq and Vds at 0.9 GHz.
60
50
40
30
4.5V
20 5.5V
3.5V
10
0
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 14. PAE vs. Idq and Vds at 2 GHz.
60
50
40
30
4.5V
20 5.5V
3.5V
10
0
200 240 280 320 360 400 440 480 520 560 600 640
Idq (mA)
Figure 15. PAE vs. Idq and Vds at 0.9 GHz.
5
5 Page ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 280 mA
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12
dB Mag.
Ang.
0.1
0.915 -132.3
31.6 37.990 112.2
-38.4 0.012 29.3
0.2
0.911 -156.2
26.2 20.324 99.9
-37.7 0.013 24.0
0.3
0.910 -165.4
22.8 13.783 94.5
-37.1 0.014 24.5
0.4
0.910 -170.9
20.3 10.342 91.1
-37.1 0.014 27.3
0.5
0.908 -173.4
18.7 8.604 88.4
-36.5 0.015 29.6
0.6
0.907 -176.1
17.1 7.194 86.1
-35.9 0.016 32.4
0.7
0.908 -178.5
15.8 6.167 84.1
-35.4 0.017 34.4
0.8
0.905 179.8
14.7 5.407 82.1
-34.9 0.018 36.3
0.9
0.909 178.2
13.6 4.799 80.3
-34.4 0.019 38.3
1
0.909 176.6
12.7 4.308 78.3
-34.0 0.020 39.9
1.5
0.902 170.5
9.1 2.859 70.3
-31.7 0.026 45.0
2
0.902 166.0
7.1 2.264 64.4
-30.5 0.030 46.9
2.5
0.901 165.0
6.6 2.134 63.1
-30.2 0.031 47.2
3
0.901 161.1
5.0 1.772 57.7
-28.9 0.036 47.4
4
0.898 155.0
3.0 1.412 49.3
-27.3 0.043 46.5
5
0.902 145.0
0.9 1.110 37.6
-24.7 0.058 43.5
6
0.893 134.9
-0.9 0.902 22.6
-22.9 0.072 35.6
7
0.899 125.8
-3.3 0.687 9.0
-22.2 0.078 27.3
8
0.895 115.6
-4.4 0.604 -1.1
-20.8 0.091 22.0
9
0.898 105.5
-5.3 0.542 -13.0
-19.6 0.105 12.3
10
0.886 95.5
-5.9 0.505 -20.2
-18.9 0.114 9.7
11
0.868 84.7
-6.6 0.469 -29.7
-17.6 0.132 0.5
12
0.862 74.0
-8.0 0.398 -40.8
-17.4 0.135 -6.3
13
0.847 64.5
-7.9 0.403 -47.5
-16.0 0.159 -12.3
14
0.844 55.6
-8.5 0.377 -58.4
-15.3 0.171 -21.3
15
0.837 47.4
-9.0 0.354 -67.2
-14.6 0.187 -30.1
16
0.824 39.9
-9.7 0.327 -72.0
-14.2 0.194 -36.8
17
0.821 31.6
-9.8 0.323 -82.7
-13.4 0.215 -44.6
18
0.805 24.6
-10.5 0.298 -90.1
-12.5 0.237 -51.8
S22
Mag. Ang.
0.647
0.689
0.699
0.702
0.691
0.691
0.694
0.695
0.692
0.692
0.698
0.700
0.699
0.697
0.707
0.699
0.697
0.652
0.646
0.641
0.695
0.742
0.735
0.766
0.800
0.797
0.763
0.786
0.781
-160.6
-171.1
-175.7
-178.5
-179.9
178.5
177.2
175.2
175.1
173.9
169.4
165.6
163.0
159.1
153.7
146.8
145.3
134.1
117.4
115.5
104.5
91.3
88.1
78.4
68.9
65.6
51.5
38.9
29.5
MSG/MAG K
dB factor
35.0 0.173
31.9 0.314
29.9 0.436
28.7 0.569
27.6 0.648
26.5 0.736
25.6 0.800
24.8 0.871
24.0 0.906
23.3 0.953
18.2 1.128
16.0 1.209
15.4 1.241
13.8 1.278
11.7 1.326
9.7 1.272
7.8 1.286
5.7 1.394
4.2 1.463
3.2 1.447
2.5 1.455
1.6 1.431
-0.1 1.661
-0.1 1.491
-0.3 1.397
-1.1 1.414
-2.3 1.608
-2.4 1.488
-3.5 1.575
40 Notes:
1. S parameter is measured on a microstrip line
30 S21 made on 0.025 inch thick alumina carrier. The
MSG
MAG
input reference plane is at the end of the gate
20 lead. The output reference plane is at the end
of the drain lead.
10
0
-10
-20
0 2 4 6 8 10 12 14 16 18
FREQUENCY (GHz)
Figure 56. MSG/MAG & |S21|2 vs. Frequency
at 4.5V 280mA.
11
11 Page |
Páginas | Total 22 Páginas | |
PDF Descargar | [ Datasheet ATF-501P8.PDF ] |
Número de pieza | Descripción | Fabricantes |
ATF-501P8 | High Linearity Enhancement Mode Pseudomorphic HEMT | AVAGO |
ATF-501P8-BLK | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package | Agilent(Hewlett-Packard) |
ATF-501P8-BLK | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package | Agilent(Hewlett-Packard) |
ATF-501P8-TR1 | Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package | Agilent(Hewlett-Packard) |
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