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PDF ATF-52189 Data sheet ( Hoja de datos )
| Número de pieza | ATF-52189 | |
| Descripción | High Linearity Mode Enhancement Pseudomorphic HEMT | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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ATF-52189
High Linearity Mode[1] Enhancement
Pseudomorphic HEMT in SOT 89 Package
Data Sheet
Description
Avago Technologies’s ATF-52189 is a single-voltage
high linearity, low noise E-pHEMT FET packaged in a
low cost surface mount SOT89 package. The device is
ideal as a medium-power, high-linearity amplifier. Its
operating frequency range is from 50 MHz to 6 GHz.
ATF-52189 is ideally suited for Cellular/PCS and
WCDMA wireless infrastructure, WLAN, WLL and
MMDS application, and general purpose discrete
E-pHEMT amplifiers which require medium power and
high linearity. All devices are 100% RF and DC tested.
Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• SOT 89 standard package
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
Specifications
2 GHz, 4.5V, 200 mA (Typ.)
Pin Connections and Package Marking
S
2GX
• 42 dBm Output IP3
• 27 dBm Output Power at 1dB gain compression
• 1.50 dB Noise Figure
• 16.0 dB Gain
• 55% PAE at P1dB
• LFOM[3] 12.5 dB
GSD
Top View
S
DSG
Bottom View
Notes:
Package marking provides orientation and identification:
“2G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
Applications
• Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for
Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity
applications
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating
the need of negative gate voltage associated with conventional depletion
mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
1 page  
ATF-52189 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA.
45
40
35
30
25
3V
20 4V
4.5V
15
100 150
200 250 300
Ids (mA)
350 400
Figure 7. OIP3 vs. Ids and Vds at 900 MHz.
45
40
35
30
25
3V
20 4V
4.5V
15
100 150
200 250 300
Ids (mA)
350 400
Figure 8. OIP3 vs. Ids and Vds at 2 GHz.
45
40
35
30
25
3V
20 4V
4.5V
15
100 150
200 250 300
Ids (mA)
350 400
Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz.
19
18
17
16
15
14 3V
4V
13 4.5V
12
100 150
200 250 300
Ids (mA)
350 400
Figure 10. Small Signal Gain vs. Ids and
Vds at 900 MHz.
30
Gain_3V
25 Pout_3V
PAE_3V
20
15
10
5
70
60
50
40
30
20
10
0
-10 -6
-2 2 6
Pin (dBm)
0
10 14
Figure 13. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 3V and Frequency = 900 MHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
19
18
17
16
15
14 3V
4V
13 4.5V
12
100 150
200 250 300
Ids (mA)
350 400
Figure 11. Small Signal Gain vs. Ids and
Vds at 2 GHz.
30
Gain_4V
25 Pout_4V
PAE_4V
20
15
10
5
70
60
50
40
30
20
10
0
-10 -6
-2 2 6
Pin (dBm)
0
10 14
Figure 14. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4V and Frequency = 900 MHz.
14
13
12
11
10
9 3V
4V
8 4.5V
7
100 150
200 250 300
Ids (mA)
350 400
Figure 12. Small Signal Gain vs. Ids and
Vds at 3.9 GHz.
30
Gain_4.5V
25 Pout_4.5V
PAE_4.5V
20
15
10
5
70
60
50
40
30
20
10
0
-10 -6
-2 2 6
Pin (dBm)
0
10 14
Figure 15. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4.5V and Frequency = 900 MHz.
5
5 Page 
ATF-52189 Typical Performance Curves (at 25°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA.
17
16
15
14
13
12
3.0V
11 4.0V
4.5V
10
100 150 200 250 300 350 400
Ids (mA)
Figure 45. OIP3 vs. Ids and Vds at 2.4 GHz.
45
40
35
30
25
3.0V
20 4.0V
4.5V
15
100 150 200 250 300 350 400
Ids (mA)
Figure 46. Small Signal Gain vs. Ids and Vds
at 2.4 GHz.
30
Gain_3V
25 Pout_3V
PAE_3V
20
60
50
40
15 30
10 20
5 10
0
-10 -6 -2 2
0
6 10 14 18
Pin (dBm)
Figure 47. Small Signal Gain/Pout/PAE vs.
Pin at Vds 3V and Freq = 2.4 GHz.
30
Gain_4V
25 Pout_4V
PAE_4V
20
60
50
40
15 30
10 20
5 10
00
-10 -6 -2 2 6 10 14 18
Pin (dBm)
Figure 48. Small Signal Gain/Pout/PAE vs.
Pin at Vds 4V and Freq = 2.4 GHz.
30
Gain_4.5V
25 Pout_4.5V
PAE_4.5V
20
60
50
40
15 30
10 20
5 10
0
-10 -6 -2 2
0
6 10 14 18
Pin (dBm)
Figure 49. Small Signal Gain/Pout/PAE vs.
Pin at Vds 4.5V and Freq = 2.4 GHz.
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet ATF-52189.PDF ] | |
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