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RF1S70N06SM Schematic ( PDF Datasheet ) - Harris

Teilenummer RF1S70N06SM
Beschreibung N-Channel Enhancement-Mode Power MOSFETs
Hersteller Harris
Logo Harris Logo 




Gesamt 6 Seiten
RF1S70N06SM Datasheet, Funktion
SEMICONDUCTOR
RFG70N06, RFP70N06,
RF1S70N06, RF1S70N06SM
December 1995
70A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs
Features
• 70A, 60V
• rDS(on) = 0.014
Temperature Compensated PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175oC Operating Temperature
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli-
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06
TO-262AA
F1S70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Formerly developmental type TA49007.
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM
60
60
±20
70
Refer to Peak Current Curve
Refer to UIS Curve
150
1.0
-55 to +175
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-51
File Number 3206.3






RF1S70N06SM Datasheet, Funktion
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Temperature Compensated PSPICE Model for the
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
.SUBCKT RFG70N06 2 1 3 ; rev 3/20/92
CA 12 8 5.56e-9
CB 15 14 5.30e-9
CIN 6 8 2.63e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 65.18
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.10e-9
LSOURCE 3 7 1.82e-9
GATE
1
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 4.66e-3
RLDRAIN 2 5 10
RGATE 9 20 1.21
RLGATE 1 9 31
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.92e-3
RLSOURCE 3 7 18.2
RVTO 18 19 RVTOMOD 1
DPLCAP 5
10
RSCL2
RSCL1
+ 51
5
51 ESCL
-
6
ESG 8
+
RLGATE
EVTO
9 20 + 18 -
RGATE 8
LGATE
6
RIN
16
- VTO +
CIN
50
RDRAIN
21
MOS1
8
S1A
S2A
12
13 14
15
8 13
S1B
S2B
CA 13
+
EGS
6
8
-
CB
+ 14
EDS
5
8
-
DBREAK
RLDRAIN
2
DRAIN
LDRAIN
11
+
EBREAK 17
18
MOS2
-
DBODY
RLSOURCE
RSOURCE 7
3
SOURCE
LSOURCE
RBREAK
17 18
RVTO
19
IT
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.605
.MODEL DBDMOD D (IS = 7.91e-12 RS = 3.87e-3 TRS1 = 2.71e-3 TRS2 = 2.50e-7 CJO = 4.84e-9 TT = 4.51e-8)
.MODEL DBKMOD D (RS = 3.9e-2 TRS1 =1.05e-4 TRS2 = 3.11e-5)
.MODEL DPLCAPMOD D (CJO = 4.8e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 3.46 KP = 47 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.46e-4 TC2 = -8.48e-7)
.MODEL RDSMOD RES (TC1 = 2.23e-3 TC2 = 6.56e-6)
.MODEL RVTOMOD RES (TC1 = -3.29e-3 TC2 = 3.49e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.35 VOFF= -6.35)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.35 VOFF= -8.35)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 3.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.0 VOFF= -2.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
3-56

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