RF1S70N06 Datasheet PDF - Harris
| Part Number | RF1S70N06 | |
| Description | N-Channel Enhancement-Mode Power MOSFETs | |
| Manufacturers | Harris | |
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SEMICONDUCTOR
RFG70N06, RFP70N06,
RF1S70N06, RF1S70N06SM
December 1995
70A, 60V, Avalanche Rated, N-Channel
Enhancement-Mode Power MOSFETs
Features
• 70A, 60V
• rDS(on) = 0.014Ω
• Temperature Compensated PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175oC Operating Temperature
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Description
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM
are N-channel power MOSFETs manufactured using the MegaFET
process. This process, which uses feature sizes approaching
those of LSI circuits, gives optimum utilization of silicon, resulting
in outstanding performance. They were designed for use in appli-
cations such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06
TO-262AA
F1S70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Formerly developmental type TA49007.
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
RFG70N06, RFP70N06
RF1S70N06, RF1S70N06SM
60
60
±20
70
Refer to Peak Current Curve
Refer to UIS Curve
150
1.0
-55 to +175
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-51
File Number 3206.3
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RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
Typical Performance Curves (Continued)
300 If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R) ln [(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
100 STARTING TJ = +25oC
STARTING TJ = +150oC
10
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IL
0.01Ω
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
VGS
0V
RGS
VDD
RL
VDS
DUT
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
tON
tD(ON)
tR
90%
10%
VGS
10%
50%
PULSE WIDTH
tOFF
tD(OFF)
tF
90%
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
3-55
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RF1S70N06 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RF1S70N06.PDF Datasheet ] | |
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