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PDF ATF-58143 Data sheet ( Hoja de datos )
| Número de pieza | ATF-58143 | |
| Descripción | Low Noise Enhancement Mode Pseudomorphic HEMT | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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ATF-58143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF-58143 is a high dynamic
range, low noise E-PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-58143 ideal as low noise ampli-
fier for cellular/PCS/WCDMA base stations, wireless lo-
cal loop, and other applications that require low noise
and high linearity performance in the 450 MHz to 6 GHz
frequency range.
Surface Mount Package SOT-343
Pin Connections and Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note:
Top View. Package marking provides orientation and identification
“8F” = Device Code
“x” = Date code character
identifies month of manufacture.
Features
Low noise and high linearity performance
Enhancement Mode Technology[1]
Excellent uniformity in product specifications
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70) in Tape-and-Reel packaging option
available
Lead-free option available
Specifications
2 GHz; 3V, 30 mA (Typ.)
30.5 dBm output 3rd order intercept
19 dBm output power at 1 dB
0.5 dB noise figure
16.5 dB associated gain
Applications
Q1 LNA for cellular/PCS/WCDMA base stations
Q1, Q2 LNA and Pre-driver amplifier for 3–4 GHz WLL
Other low noise and high linearity applications at 450
MHz to 6 GHz
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge Damage and Control.
1 page  
ATF-58143 Typical Performance Curves, continued
24
22
20
18
16
14 3V
4V
12
0 10 20 30 40 50 60 70
Idq (mA)
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.[1]
30
25
20
15
10 25°C
-40°C
85°C
5
0 1 2 3 4 56
FREQUENCY (GHz)
Figure 16. Gain vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
23
22
21
20
19
18
17
16
3V
4V
15
0 10 20 30 40 50 60 70
Idq (mA)
Figure 14. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.[1]
35
30
25
20
15 25°C
-40°C
85°C
10
0 1 2 3 4 56
FREQUENCY (GHz)
Figure 17. OIP3 vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
Note:
1. When plotting P1dB, the drain current was
allowed to vary dependent on the RF input power.
1.5
1.0
0.5
25°C
-40°C
85°C
0
0 1 2 3 4 56
FREQUENCY (GHz)
Figure 15. Fmin vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
0
1234
FREQUENCY (GHz)
25°C
-40°C
85°C
56
Figure 18. P1dB vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ATF-58143.PDF ] | |
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