A1931 Datasheet PDF - Toshiba
| Part Number | A1931 | |
| Description | Silicon PNP Epitaxial Type Transistor | |
| Manufacturers | Toshiba | |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
2SA1931
High-Current Switching Applications
2SA1931
Unit: mm
• Low saturation voltage: VCE (sat) = −0.4 V (max)
• High-speed switching time: tstg = 1.0 µs (typ.)
• Complementary to 2SC4881
Maximum Ratings (Tc = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
−60
−50
−7
−5
−1
2.0
20
150
−55 to 150
Electrical Characteristics (Tc = 25°C)
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
Symbol
Test Conditions
Min
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = −50 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −1 V, IC = 1 A
VCE = −1 V, IC = −3 A
IC = −2 A, IB = −0.2 A
IC = −2 A, IB = −0.2 A
VCB = −1 V, IC = −1 A
VCB = −10 V, IE = 0, f = 1 MHz
ton 20 µs Input IB2 Output
IB2 IB1
tstg VCC = −30 V
―
―
−50
100
60
―
―
―
―
―
―
−IB1 = IB2 = 0.15 A, duty cycle ≤ 1%
tf ―
Typ.
―
―
―
―
―
−0.2
−0.9
60
100
0.1
1.0
0.1
Max
−1
−1
―
300
―
−0.4
−1.5
―
―
Unit
µA
µA
V
V
V
MHz
pF
―
― µs
―
1 2005-07-27
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for A1931 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. Silicon PNP Epitaxial Type Transistor [ Learn More ] | |
| Download | [ A1931.PDF Datasheet ] | |
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