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Teilenummer | WTI56D |
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Beschreibung | POWER TRANSISTOR | |
Hersteller | Winsem Technology | |
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Gesamt 5 Seiten Winsem Technology Corp.
High Voltage NPN Transistor
WTBV56DM (R) / WTI56D
POWER TRANSISTOR
TO-126
Pin Definition
1. Emitter
2. Collector
3. Base
TO-126 R
Pin Definition
1. Base
2. Collector
3. Emitter
Features
• High Voltage
• Very High Switch Speed
• BVCEO : 400V
• BVCBO : 800V
• IC : 4A
• Silicon Triple Diffused Type
Application
• Electronic Ballasts
• Adapter
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Total Power Dissipation(TO126)
Total Power Dissipation(TO251)
Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
TJ
TSTG
Version A12
Max Rating
800
400
9
4
8
20
35
150
-55 ~ +150
Unit
V
V
V
A
A
W
℃
℃
Page 1
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ WTI56D Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WTI56D | POWER TRANSISTOR | Winsem Technology |
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