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Teilenummer | R1LV0416CSB-5SI |
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Beschreibung | 4M SRAM | |
Hersteller | Renesas Technology | |
Logo | ||
Gesamt 19 Seiten R1LV0416C-I Series
Wide Temperature Range Version
4 M SRAM (256-kword × 16-bit)
REJ03C0105-0100Z
Rev. 1.00
Aug.05.2003
Description
The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II.
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 1.25 µW (typ) (VCC = 2.5 V)
: 1.5 µW (typ) (VCC = 3.0 V)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature range: −40 to +85°C
Rev.1.00, Aug.05.2003, page 1 of 18
R1LV0416C-I Series
DC Characteristics
Parameter
Symbol Min
Typ*1 Max Unit Test conditions
Input leakage current
Output leakage current
Operating current
Average operating current
|ILI|
|ILO|
ICC
ICC1
ICC2
Standby current
Standby current
to +85°C
ISB
ISB1
to +70°C
ISB1
to +40°C
ISB1
−40°C to +25°C ISB1
5
8
2
0.1
0.7*2
0.7*3
0.5*2
0.5*3
1 µA
1 µA
20 mA
25 mA
5 mA
0.3 mA
20*2 µA
10*3 µA
20*2 µA
10*3 µA
10*2 µA
3*3 µA
10*2 µA
3*3 µA
Vin = VSS to VCC
CS1# = VIH or CS2 = VIL or
OE# = VIH or WE# = VIL or
LB# = UB# = VIH,
VI/O = VSS to VCC
CS1# = VIL, CS2 = VIH,
Others = VIH/VIL, II/O = 0 mA
Min. cycle, duty = 100%,
II/O = 0 mA, CS1# = VIL,
CS2 = VIH,
Others = VIH/VIL
Cycle time = 1 µs,
duty = 100%,
II/O = 0 mA, CS1# ≤ 0.2 V,
CS2 ≥ VCC − 0.2 V
VIH ≥ VCC − 0.2 V, VIL ≤ 0.2 V
CS2 = VIL
Vin ≥ 0 V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS1# ≥ VCC − 0.2 V,
CS2 ≥ VCC − 0.2 V or
(3) LB# = UB# ≥ VCC − 0.2 V,
CS2 ≥ VCC − 0.2 V,
CS1# ≤ 0.2 V
Output high
voltage
VCC =2.2 V to 2.7 V VOH
2.0
— — V IOH = −0.5 mA
VCC =2.7 V to 3.6 V VOH
2.4
— — V IOH = −1 mA
VCC =2.2 V to 3.6 V VOH2
VCC − 0.2 —
— V IOH = −100 µA
Output low voltage VCC =2.2 V to 2.7 V VOL
—
— 0.4 V IOL = 0.5 mA
VCC =2.7 V to 3.6 V VOL
—
— 0.4 V IOL = 2 mA
VCC =2.2 V to 3.6 V VOL2
—
— 0.2 V IOL = 100 µA
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. L version. (−7LI)
3. SL version. (−5SI)
Rev.1.00, Aug.05.2003, page 6 of 18
6 Page R1LV0416C-I Series
Write Timing Waveform (1) (WE# Clock)
Address
CS1#
CS2
LB#, UB#
WE#
Din
Dout
tWC
Valid address
tCW*5
tCW*5
tBW
tWR*7
tAS*6
tAW
tWP*4
tWHZ*1, 2
tDW tDH
Valid data
tOW*2
High impedance
Rev.1.00, Aug.05.2003, page 12 of 18
12 Page | ||
Seiten | Gesamt 19 Seiten | |
PDF Download | [ R1LV0416CSB-5SI Schematic.PDF ] |
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R1LV0416CSB-5SI | 4M SRAM | Renesas Technology |
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