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R1WV6416RSD-7S Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer R1WV6416RSD-7S
Beschreibung 64Mb Advanced LPSRAM
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 20 Seiten
R1WV6416RSD-7S Datasheet, Funktion
R1WV6416R Series
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
REJ03C0368-0100
Rev.1.00
2009.05.07
Description
The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by
16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating
and battery backup are the important design objectives.
The R1WV6416R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with
pin pitch of 0.5mm], 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch
of 0.4mm] and 48-ball fine pitch ball grid array [f-BGA] package. It gives the best solution for compaction of
mounting area as well as flexibility of wiring pattern of printed circuit boards.
Features
Single 2.7~3.6V power supply
Small stand-by current: 8 µA (3.0V, typical)
No clocks, No refresh
All inputs and outputs are TTL compatible.
Easy memory expansion by CS1#, CS2, LB# and UB#
Common Data I/O
Three-state outputs: OR-tie Capability
OE# prevents data contention on the I/O bus
Ordering Information
Type No.
R1WV6416RSA-5S%
R1WV6416RSA-7S%
R1WV6416RSD-5S%
R1WV6416RSD-7S%
R1WV6416RBG-5S%
R1WV6416RBG-7S%
Access time
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
Package
12mm x 20mm 48-pin plastic TSOP (I)
(normal-bend type) (48P3R)
350 mil 52-pin plastic μ-TSOP (II)
(normal-bend type) (52PTG)
f-BGA 0.75mm pitch 48-ball
% - Temperature version; see table below
% Temperature Range
R 0 ~ +70 °C
I -40 ~ +85 °C
REJ03C0368-0100, Rev.1.00, 2009.05.07
Page 1 of 16






R1WV6416RSD-7S Datasheet, Funktion
R1WV6416R Series
Recommended Operating Conditions
Parameter
Symbol Min. Typ. Max. Unit
Supply voltage
Vcc 2.7 3.0 3.6 V
Vss 0 0 0 V
Input high voltage
VIH
2.4
-
Vcc+0.2
V
Input low voltage
VIL -0.2 - 0.4 V
R ver.
0 - +70 °C
Ambient temperature range
Ta
I ver.
-40 - +85 °C
Note 1. –2.0V in case of AC (Pulse width 30ns)
2. Ambient temperature range depends on R/I-version. Please see table on page 1.
1
2
2
Note
DC Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions*3
Input leakage current
Output leakage current
| ILI |
-
-
1
μA Vin = Vss to Vcc
BYTE# Vcc -0.2V or BYTE# 0.2V
| ILO |
-
-
1
μA CS1# =VIH or CS2 =VIL or
OE# =VIH or WE# =VIL or
LB# = UB# =VIH, VI/O =Vss to Vcc
Average operating current
Min. cycle, duty =100%, II/O = 0mA
ICC1
- 45*1 60
mA BYTE# Vcc -0.2V or BYTE# 0.2V
CS1# =VIL, CS2 =VIH, Others = VIH/VIL
Standby current
Standby current
Output high voltage
Output low voltage
Cycle =1μs, duty =100%, II/O = 0mA
ICC2
-
5*1 10
BYTE# Vcc -0.2V or BYTE# 0.2V
mA CS1# 0.2V, CS2 VCC-0.2V,
VIH VCC-0.2V, VIL 0.2V
ISB
- 0.1*1 0.3
BYTE# Vcc -0.2V or BYTE# 0.2V
mA
CS2 =VIL
-
8*1 24
Vin 0V
μA ~+25°C BYTE# Vcc -0.2V or
- 14*2 48
BYTE# 0.2V
μA ~+40°C (1) 0V CS2 0.2V or
ISB1 (2) CS1# VCC-0.2V,
- - 100 μA ~+70°C CS2 VCC-0.2V or
(3) LB# = UB# VCC-0.2V,
- - 160 μA ~+85°C CS1# 0.2V,
CS2 VCC-0.2V
VOH 2.4 -
-
BYTE# Vcc -0.2V or BYTE# 0.2V
V
IOH = -0.5mA
BYTE# Vcc -0.2V or BYTE# 0.2V
VOL
-
- 0.4
V
IOL = 2mA
Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25ºC), and not 100% tested.
2. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 40ºC), and not 100% tested.
3. BYTE# pin is supported for 48-pin TSOP (I) and 52-pin µTSOP (II) packages.
REJ03C0368-0100, Rev.1.00, 2009.05.07
Page 6 of 16

6 Page









R1WV6416RSD-7S pdf, datenblatt
R1WV6416R Series
Write Cycle (1)*1 (WE# CLOCK)
A0~21
(Word Mode)
A -1~21
(Byte Mode)
LB#,UB#
CS1#
CS2
WE#
OE#
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
tWC
tBW
tOH
tCW
tCW
tAW
tAS tWP
tWR
tOHZ
tWHZ
tOLZ
tOW
Valid Data
tDW tDH
Note1. BYTE# Vcc – 0.2V or BYTE# 0.2V
REJ03C0368-0100, Rev.1.00, 2009.05.07
Page 12 of 16

12 Page





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