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R1WV3216RBG-8S Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer R1WV3216RBG-8S
Beschreibung 32Mb Advanced LPSRAM
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 18 Seiten
R1WV3216RBG-8S Datasheet, Funktion
R1W V3216R Series
32Mb Advanced LPSRAM (2M wordx16bit)
REJ03C0215-0300Z
Rev.3.00
2008.03.03
Description
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced
LPSRAMs are assembled in one package.
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:4µA (3.0V, typ.)
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 1 of 15






R1WV3216RBG-8S Datasheet, Funktion
R1W V3216R Series
Recommended Operating Conditions
Parameter
Symbol Min. Typ. Max. Unit
Supply voltage
Vcc 2.7 3.0 3.6
Vss 0 0 0
V
V
Input high voltage
VIH 2.4
-
Vcc+0.2
V
Input low voltage
VIL -0.2 - 0.4 V
R ver.
0 - +70 ºC
Ambient temperature range
Ta
I ver.
-40 - +85 ºC
Note 1. –2.0V in case of AC (Pulse width 30ns)
2. Ambient temperature range depends on R/I-version. Please see table on page 2.
Note
1
2
2
DC Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions*3
Input leakage current
|ILI|
Output leakage current
|ILo|
Average operating
current
Standby current
Icc1
Icc2
ISB
Standby current
ISB1
- - 1 µA Vin=Vss to Vcc
BYTE# Vcc-0.2V or
BYTE# 0.2V,
- - 1 µA CS1# =VIH or CS2=VIL or
OE# = VIH or WE# =VIL or
LB# =UB# =VIH,VI/O=Vss to Vcc
BYTE# Vcc-0.2V or
BYTE# 0.2V,
- 30 *1 55 mA Min. cycle, duty =100%
I I/O = 0 mA, CS1# =VIL,
CS2=VIH Others = VIH / VIL
BYTE# Vcc-0.2V or
BYTE# 0.2V,
- 3 *1 8 mA Cycle time = 1 µs, I I/O = 0 mA,
CS1#0.2V, CS2 VCC-0.2V
VIH VCC-0.2V , VIL 0.2V,
duty=100%
- 0.1 *1 0.3 mA BYTE# Vcc-0.2V or BYTE#0.2V,
CS2=VIL
- 4 *1 12 µA ~+25ºC V in 0V,
BYTE# Vcc-0.2V or
BYTE#0.2V,
- 7 *2 24 µA ~+40ºC (1) 0VCS20.2V or
(2) CS2Vcc-0.2V,
CS1# Vcc-0.2V or
- - 50 µA ~+70ºC (3)LB# =UB# Vcc-0.2V,
CS2Vcc-0.2V,
-
-
80
µA
~+85ºC
CS1# 0.2V
Average value
Output high voltage
VOH
2.4
-
- V BYTE# Vcc-0.2V or BYTE#0.2V,
IOH = -1mA
Output Low voltage
VOL
-
- 0.4 V BYTE# Vcc-0.2V or BYTE#0.2V,
IOL = 2mA
Note 1. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 25ºC), and not 100% tested.
2. Typical parameter indicates the value for the center of distribution at Vcc=3.0V (Ta= 40ºC), and not 100% tested.
3. BYTE# pin is supported by only 52-pin µTSOP type.
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 6 of 15

6 Page









R1WV3216RBG-8S pdf, datenblatt
R1W V3216R Series
Write Timing Waveform (2) (CS1#, CS2 CLOCK, OE#=VIH)
A0~20
(Word Mode)
A-1~20
(Byte Mode)
LB#,UB#
tWC
Valid address
tBW
CS1#
CS2
tCW
tAS
tCW
tWR
WE#
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
tWP
tDW tDH
Valid data
Note: Byte Mode is supported by only 52-pin µTSOP type. BYTE# Vcc-0.2V or BYTE# 0.2V
REJ03C0215-0300Z Rev.3.00 2008.03.03
page 12 of 15

12 Page





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