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Teilenummer | R1LV0408DSP-7L |
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Beschreibung | 4M SRAM | |
Hersteller | Renesas | |
Logo | ||
Gesamt 14 Seiten R1LV0408D Series
4M SRAM (512-kword × 8-bit)
REJ03C0310-0100
Rev.1.00
May.24.2007
Description
The R1LV0408D is a 4-Mbit static RAM organized 512-kword × 8-bit, fabricated by Renesas’s high-
performance 0.15µm CMOS and TFT technologies. R1LV0408D Series has realized higher density,
higher performance and low power consumption. The R1LV0408D Series offers low power standby
power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-
pin TSOP II and 32-pin STSOP.
Features
• Single 3 V supply: 2.7 V to 3.6 V
• Access time: 55/70 ns (max)
• Power dissipation:
Standby: 3 µW (typ)
• Equal access and cycle times
• Common data input and output.
Three state output
• Directly TTL compatible.
All inputs and outputs
• Battery backup operation.
Rev.1.00, May.24.2007, page 1 of 12
R1LV0408D Series
DC Characteristics
Parameter
Symbol Min Typ Max Unit
Test conditions
Input leakage current
|I |
LI
1
µA
Vin = V to V
SS CC
Output leakage current
|I |
LO
1
µA
CS# = V or OE# = V or
IH IH
WE# = V or V = V to V
IL I/O SS CC
Operating current
ICC 10 mA CS# = VIL,
Others = VIH/ VIL, II/O = 0 mA
Average operating current
I
CC1
25 mA Min. cycle, duty = 100%,
CS# = V , Others = V /V
IL IH IL
I = 0 mA
I/O
ICC2 5 mA Cycle time = 1 µs,
duty = 100%,
I
I/O
=
0
mA,
CS#
≤
0.2
V,
V
IH
≥
V
CC
−
0.2
V,
V
IL
≤
0.2
V
Standby current
I
SB
0.1*1
0.3
mA CS# = V
IH
Standby −5S%
current
to +85°C
to +70°C
ISB1 10 µA Vin ≥ 0 V, CS# ≥ VCC − 0.2 V
ISB1 8 µA Average values
to +40°C
I
SB1
3 µA
to +25°C
I
SB1
1*1 2.5 µA
−7L% to +85°C
I
SB1
20 µA
to +70°C
ISB1 16 µA
to +40°C
ISB1 10 µA
to +25°C
I
SB1
1*1 10 µA
Output low voltage
V
OL
0.4
V I = 2.1 mA
OL
V
OL2
0.2
V
I
OL
=
100
µA
Output high voltage
VOH 2.4 V IOH = −1.0 mA
VOH2 VCC − 0.2 V IOH = −0.1 mA
Note: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ
Input capacitance
Cin
Input/output capacitance
C
I/O
Note: 1. This parameter is sampled and not 100% tested.
Max
8
10
Unit Test conditions
pF Vin = 0 V
pF V = 0 V
I/O
Note
1
1
Rev.1.00, May.24.2007, page 6 of 12
6 Page R1LV0408D Series
Low VCC Data Retention Characteristics
(Ta = 0 to +70°C / −40 to +85°C)
Parameter
Symbol Min Typ Max Unit
Test conditions
VCC for data retention
VDR 2 V CS# ≥ VCC − 0.2 V, Vin ≥ 0 V
Data
retention
current
−5S%
to +85°C
to +70°C
to +40°C
ICCDR 10 µA VCC = 3.0 V, Vin ≥ 0 V
I
CCDR
8
µA
CS#
≥
V
CC
−
0.2
V
I
CCDR
3 µA Average values
to +25°C
I
CCDR
1*1 2.5 µA
−7L%
to +85°C
ICCDR
20 µA
to +70°C
ICCDR
16 µA
to +40°C
I
CCDR
10 µA
to +25°C
I
CCDR
1*1 10 µA
Chip deselect to data retention time
t
CDR
0 ns See retention waveform
Operation recovery time
tR 5 ms
Note:
1.
Typical
values
are
at
V
CC
=
3.0
V,
Ta
=
+25°C
and
specified
loading,
and
not
guaranteed.
Low VCC Data Retention Timing Waveform (CS# Controlled)
VCC
2.7 V
tCDR
Data retention mode
tR
2.2 V
VDR
CS#
0V
CS# ≥ VCC – 0.2 V
Rev.1.00, May.24.2007, page 12 of 12
12 Page | ||
Seiten | Gesamt 14 Seiten | |
PDF Download | [ R1LV0408DSP-7L Schematic.PDF ] |
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