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Teilenummer | R1LV0416DBG-7LI |
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Beschreibung | 4M SRAM | |
Hersteller | Renesas | |
Logo | ||
Gesamt 17 Seiten R1LV0416D Series
4M SRAM (256-kword × 16-bit)
REJ03C0311-0100
Rev.1.00
May.24.2007
Description
The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm
CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power
consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery
backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch
ball grid array.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
Standby: 3 µW (typ) (VCC = 3.0 V)
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature Range: -40 to +85°C
Rev.1.00, May.24.2007, page 1 of 15
R1LV0416D Series
DC Characteristics
Parameter
Symbol Min Typ Max Unit
Test conditions
Input leakage current
|I |
LI
1
µA
Vin = V to V
SS CC
Output leakage current
|I |
LO
1
µA
CS1# = V or CS2 = V or
IH IL
OE# = V or WE# = V or
IH IL
LB# = UB# = VIH,
VI/O = VSS to VCC
Operating current
I
CC
20 mA CS1# = V , CS2 = V ,
IL IH
Others = V /V , I = 0 mA
IH IL I/O
Average operating current
I
CC1
25 mA Min. cycle, duty = 100%,
II/O = 0 mA, CS1# = VIL,
CS2 = VIH,
Others = V /V
IH IL
I
CC2
5 mA Cycle time = 1 µs,
duty = 100%,
II/O = 0 mA, CS1# ≤ 0.2 V,
CS2 ≥ VCC − 0.2 V
V
IH
≥
V
CC
−
0.2
V,
V
IL
≤
0.2
V
Standby current
I
SB
0.1*1
0.3
mA CS2 = V
IL
Standby current
−5SI to +85°C
I
SB1
10 µA Vin ≥ 0 V
to +70°C
ISB1 8 µA (1) 0 V ≤ CS2 ≤ 0.2 V or
to +40°C
ISB1
3
µA
(2)
CS1#
≥
V
CC
−
0.2
V,
to +25°C
−7LI to +85°C
to +70°C
to +40°C
to +25°C
I
SB1
1*1 2.5 µA
CS2
≥
V
CC
−
0.2
V
or
I
SB1
20 µA (3) LB# = UB# ≥ VCC − 0.2 V,
I
SB1
16 µA
CS2
≥
V
CC
−
0.2
V,
ISB1
10 µA
CS1# ≤ 0.2 V
ISB1 1*1 10 µA Average values
Output high voltage
V
OH
2.4
—
—
V
I
OH
=
−1
mA
V
OH2
V
CC
−
0.2
—
—
V
I
OH
=
−100
µA
Output low voltage
V — — 0.4 V I = 2 mA
OL OL
VOL2 — — 0.2 V IOL = 100 µA
Note:
1.
Typical
values
are
at
V
CC
=
3.0
V,
Ta
=
+25°C
and
specified
loading,
and
not
guaranteed.
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ Max Unit
Input capacitance
Cin 8 pF
Input/output capacitance
CI/O 10 pF
Note: 1. This parameter is sampled and not 100% tested.
Test conditions
Vin = 0 V
VI/O = 0 V
Note
1
1
Rev.1.00, May.24.2007, page 6 of 15
6 Page R1LV0416D Series
Write Timing Waveform (2) (CS# Clock, OE# = VIH)
Address
CS1#
tAS*6
tWC
Valid address
tAW
tCW*5
tCW*5
CS2
LB#, UB#
tBW
tWR*7
WE#
Din
Dout
tWP*4
tDW tDH
Valid data
High impedance
Rev.1.00, May.24.2007, page 12 of 15
12 Page | ||
Seiten | Gesamt 17 Seiten | |
PDF Download | [ R1LV0416DBG-7LI Schematic.PDF ] |
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