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R1RW0416DSB-2LR Schematic ( PDF Datasheet ) - Renesas

Teilenummer R1RW0416DSB-2LR
Beschreibung 4M High Speed SRAM
Hersteller Renesas
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Gesamt 16 Seiten
R1RW0416DSB-2LR Datasheet, Funktion
R1RW0416D Series
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0107-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416D
is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.
Features
Single 3.3 V supply: 3.3 V ± 0.3 V
Access time: 12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 130 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
Data retention current: 0.4 mA (max) (L-version)
Data retention voltage: 2.0 V (min) (L-version)
Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 14






R1RW0416DSB-2LR Datasheet, Funktion
R1RW0416D Series
DC Characteristics
(Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)
Parameter
Input leakage current
Output leakage current
Operating power supply current
Symbol
|ILI|
|ILO|
ICC
Min
Standby power supply current
I
SB
ISB1
Max Unit
2 µA
2 µA
130 mA
40 mA
5 mA
*1
0.8*1
Output voltage
VOL
0.4
VOH 2.4
Note: 1. This characteristics is guaranteed only for L-version.
mA
V
V
Test conditions
VIN = VSS to VCC
VIN = VSS to VCC
Min cycle
CS# = VIL, IOUT = 0 mA
Other inputs = V /V
IH IL
Min cycle, CS# = V ,
IH
Other inputs = VIH/VIL
f = 0 MHz
VCC CS# VCC 0.2 V,
(1)
0
V
V
IN
0.2
V
or
(2) VCC VIN VCC 0.2 V
IOL = 8 mA
IOH = 4 mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Input capacitance*1
C
IN
Input/output capacitance*1
C
I/O
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
Unit
pF
pF
Test conditions
V =0V
IN
V =0V
I/O
Rev.1.00, Mar.12.2004, page 6 of 14

6 Page









R1RW0416DSB-2LR pdf, datenblatt
R1RW0416D Series
Write Timing Waveform (2) (CS# Controlled)
Address
WE# *3
CS# *3
tWC
Valid address
tAW
tAS
tWP
tCW
tWR
OE#
LB#, UB#
DOUT
DIN
tBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance *4
tDW tDH
Valid data
Rev.1.00, Mar.12.2004, page 12 of 14

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