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PDF R1RP0416D Data sheet ( Hoja de datos )
| Número de pieza | R1RP0416D | |
| Descripción | 4M High Speed SRAM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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R1RP0416D Series
4M High Speed SRAM (256-kword × 16-bit)
REJ03C0108-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 5.0 V supply: 5.0 V ± 10%
• Access time: 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 160 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 1.0 mA (max) (L-version)
• Data retention current: 0.5 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center VCC and VSS type pin out
Ordering Information
Type No.
R1RP0416DGE-2PR
R1RP0416DGE-2LR
R1RP0416DSB-2PR
R1RP0416DSB-2LR
Access time
12 ns
12 ns
12 ns
12 ns
Package
400-mil 44-pin plastic SOJ (44P0K)
400-mil 44-pin plastic TSOPII (44P3W-H)
Rev.1.00, Mar.12.2004, page 1 of 13
1 page  
R1RP0416D Series
DC Characteristics
(Ta = 0 to +70°C, VCC = 5.0 V ± 10%, VSS = 0 V)
Parameter
Symbol Min
Input leakage current
Output leakage current
Operation power supply current
|I |
LI
|I |
LO
I
CC
Standby power supply current
ISB
I
SB1
Max Unit
2 µA
2 µA
160 mA
40 mA
5 mA
*1
1.0*1
Output voltage
V
OL
0.4
V
OH
2.4
Note: 1. This characteristics is guaranteed only for L-version.
V
V
Test conditions
V = V to V
IN SS
CC
V = V to V
IN SS
CC
Min cycle
CS# = VIL, lOUT = 0 mA
Other inputs = VIH/VIL
Min cycle, CS# = VIH,
Other inputs = V /V
IH IL
f = 0 MHz
VCC ≥ CS# ≥ VCC − 0.2 V,
(1) 0 V ≤ VIN ≤ 0.2 V or
(2) VCC ≥ VIN ≥ VCC − 0.2 V
I = 8 mA
OL
I
OH
=
−4
mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Input capacitance*1
CIN
Input/output capacitance*1
CI/O
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
Unit
pF
pF
Test conditions
VIN = 0 V
VI/O = 0 V
Rev.1.00, Mar.12.2004, page 5 of 13
5 Page 
R1RP0416D Series
Write Timing Waveform (2) (CS# Controlled)
Address
WE# *3
CS# *3
tWC
Valid address
tAW
tAS
tWP
tCW
tWR
OE#
LB#, UB#
DOUT
DIN
tBW
tWHZ
tOHZ
*2
tOLZ
tOW
High impedance *4
tDW tDH
Valid data
Rev.1.00, Mar.12.2004, page 11 of 13
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet R1RP0416D.PDF ] | |
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