R1RW0404D Datasheet PDF - Renesas
| Part Number | R1RW0404D | |
| Description | 4M High Speed SRAM | |
| Manufacturers | Renesas | |
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There is a preview and R1RW0404D download ( pdf file ) link at the bottom of this page. Total 13 Pages | ||
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R1RW0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0115-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed and high density
memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin
SOJ for high density surface mounting.
Features
• Single supply: 3.3 V ± 0.3 V
• Access time: 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 100 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
• Data retention current: 0.4 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11
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R1RW0404D Series
DC Characteristics
(Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)
Parameter
Input leakage current
Output leakage current
Operation power supply current
Symbol
IILII
IILOI
I
CC
Min
Standby power supply current
ISB
I
SB1
Max
2
2
100
40
5
*1
0.8*1
Output voltage
V
OL
0.4
V
OH
2.4
Note: 1. This characteristics is guaranteed only for L-version.
Unit
µA
µA
mA
mA
mA
V
V
Test conditions
VIN = VSS to VCC
VIN = VSS to VCC
Min cycle
CS# = VIL, lOUT = 0 mA
Other inputs = V /V
IH IL
Min cycle, CS# = VIH,
Other inputs = VIH/VIL
f = 0 MHz
VCC ≥ CS# ≥ VCC − 0.2 V,
(1)
0
V
≤
V
IN
≤
0.2
V
or
(2) VCC ≥ VIN ≥ VCC − 0.2 V
I = 8 mA
OL
I
OH
=
−4
mA
Capacitance
(Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Max
Input capacitance*1
CIN
6
Input/output capacitance*1
CI/O
8
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions
VIN = 0 V
VI/O = 0 V
Rev.1.00, Mar.12.2004, page 5 of 11
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for R1RW0404D electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ R1RW0404D.PDF Datasheet ] | |
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