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ADG1406 Schematic ( PDF Datasheet ) - Analog Devices

Teilenummer ADG1406
Beschreibung CMOS Multiplexers
Hersteller Analog Devices
Logo Analog Devices Logo 




Gesamt 20 Seiten
ADG1406 Datasheet, Funktion
Data Sheet
9.5 Ω RON, 16-Channel, Differential 8-Channel,
±15 V/+12 V/±5 V iCMOS Multiplexers
ADG1406/ADG1407
FEATURES
9.5 Ω on resistance at 25°C
Up to 300 mA of continuous current
Fully specified at ±15 V/+12 V/±5 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP
APPLICATIONS
Medical equipment
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
FUNCTIONAL BLOCK DIAGRAMS
ADG1406
S1
D
S16
1-OF-16
DECODER
A0 A1 A2 A3 EN
Figure 1.
ADG1407
S1A
DA
S8A
GENERAL DESCRIPTION
The ADG1406 and ADG1407 are monolithic iCMOS® analog
multiplexers comprising 16 single channels and eight differential
channels, respectively. The ADG1406 switches one of 16 inputs
to a common output, as determined by the 4-bit binary address
lines (A0, A1, A2, and A3). The ADG1407 switches one of eight
differential inputs to a common differential output, as determined
by the 3-bit binary address lines (A0, A1, and A2). An EN input
on both devices enables or disables the device. When disabled,
all channels switch off. When on, each channel conducts equally
well in both directions and has an input signal range that extends
to the supplies.
The industrial CMOS (iCMOS) modular manufacturing
process combines high voltage complementary metal-oxide
semiconductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
Rev. C
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
S1B
S8B
1-OF-8
DECODER
DB
A0 A1 A2 EN
Figure 2.
of high voltage devices has been able to achieve. Unlike analog
ICs using conventional CMOS processes, iCMOS components
can tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
The ultralow on resistance and on-resistance flatness of these
switches make them ideal solutions for data acquisition and gain
switching applications where low distortion is critical. iCMOS
construction ensures ultralow power dissipation, making the
devices ideally suited for portable and battery-powered instruments.
Table 1. Related Devices
Device No.
Description
ADG1206/ADG1207 Low capacitance, low charge injection,
and low leakage 8-/16-channel ±15 V
multiplexers
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2008–2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com






ADG1406 Datasheet, Funktion
ADG1406/ADG1407
Data Sheet
±5 V DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 4.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
−40°C to
+25°C +85°C
21
−40°C to
+125°C1
VSS to VDD
Unit
V
Ω typ
On-Resistance Match Between
Channels (ΔRON)
On-Resistance Flatness (RFLAT(ON))
25
0.6
1.3
5.2
29
1.7
32 Ω max
Ω typ
1.9 Ω max
Ω typ
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
6.4
±0.01
±0.25
±0.01
±0.5
±0.01
±0.5
7.3
±1
±3
±3
±0.002
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS2
Transition Time, tTRANSITION
Break-Before-Make Time Delay, tBBM
3.5
260
435
90
510
tON (EN)
tOFF (EN)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion, THD + N
230
335
205
290
10
–73
–70
0.18
400
340
7.6 Ω max
nA typ
±4 nA max
nA typ
±20 nA max
nA typ
±20 nA max
2.0 V min
0.8 V max
μA typ
±0.1 μA max
pF typ
ns typ
565 ns max
ns typ
30 ns min
ns typ
445 ns max
ns typ
370 ns max
pC typ
dB typ
dB typ
% typ
−3 dB Bandwidth
ADG1406
ADG1407
Insertion Loss
CS (Off )
CD (Off )
ADG1406
ADG1407
CD, CS (On)
ADG1406
ADG1407
40 MHz typ
80 MHz typ
1.15 dB typ
10 pF typ
123 pF typ
62 pF typ
148 pF typ
88 pF typ
Rev. C | Page 6 of 20
Test Conditions/Comments
VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5 V,
IS = −10 mA; see Figure 27
VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5V,
IS = −10 mA
VDD = +4.5 V, VSS = −4.5 V, VS = ±4.5 V,
IS = −10 mA
VDD = +5.5 V, VSS = −5.5 V
VS = ±4.5 V, VD = 4.5 V; see Figure 28
VS = ±4.5 V, VD = 4.5 V; see Figure 28
VS = VD = ±4.5 V; see Figure 29
VIN = VGND or VDD
RL = 100 Ω, CL = 35 pF
VS = 5 V; see Figure 30
RL = 100 Ω, CL = 35 pF
VS1 = VS2 = 5 V; see Figure 31
RL = 100 Ω, CL = 35 pF
VS = 5 V; see Figure 32
RL = 100 Ω, CL = 35 pF
VS = 5 V; see Figure 32
VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 33
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 35
RL = 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz; see
Figure 37
RL = 50 Ω, CL = 5 pF; see Figure 36
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 36
f = 1 MHz
f = 1 MHz
f = 1 MHz

6 Page









ADG1406 pdf, datenblatt
ADG1406/ADG1407
Table 12. ADG1407 Truth Table
A2 A1 A0 EN On Switch Pair
X X X 0 None
00011
00112
01013
01114
10015
10116
11017
11118
Data Sheet
Rev. C | Page 12 of 20

12 Page





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