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PDF AP4810GSM Data sheet ( Hoja de datos )
| Número de pieza | AP4810GSM | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP4810GSM (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Advanced Power
Electronics Corp.
AP4810GSM
RoHS-compliant Product
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Simple Drive Requirement
▼ Good Recovery Time
▼ Fast Switching Performance
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
D
30V
13.5mΩ
11A
Schottky Diode
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
VKA
IF@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Schottky Reverse Voltage
Continous Forward Current
IFM
PD@TA=25℃
Pulsed Diode Forward Current
Max Power Dissipation (MOSFET)
Max Power Dissipation (Schottky)
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
11
9.3
50
30
1
25
2.5
2.0
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3(MOSFET)
Rthj-a
Maximum Thermal Resistance, Junction-ambient3(Schottky)
Value
50
60
Units
V
V
A
A
A
V
A
A
W
W
℃
℃
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
200910296
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP4810GSM.PDF ] | |
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