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Número de pieza | AP88N30W | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP88N30W (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP88N30W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ High Speed Switching
G
D
S
Description
AP88N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
BVDSS
RDS(ON)
ID
G
D
S
300V
48mΩ
88A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
IDM
IDR
IDR(PULSE)
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current1
Total Power Dissipation
IAR
EAR
TSTG
TJ
Linear Derating Factor
Avalanche Current3
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
Rating
300
±30
88
270
88
176
150
1.2
30
45
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.833
40
Data and specifications subject to change without notice
Units
V
V
A
A
A
A
W
W/℃
A
mJ
℃
℃
Units
℃/W
℃/W
200319075-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AP88N30W.PDF ] |
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