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PDF AP88N30W Data sheet ( Hoja de datos )

Número de pieza AP88N30W
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP88N30W Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP88N30W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
High Speed Switching
G
D
S
Description
AP88N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
BVDSS
RDS(ON)
ID
G
D
S
300V
48mΩ
88A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
IDM
IDR
IDR(PULSE)
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current1
Total Power Dissipation
IAR
EAR
TSTG
TJ
Linear Derating Factor
Avalanche Current3
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
Rating
300
±30
88
270
88
176
150
1.2
30
45
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.833
40
Data and specifications subject to change without notice
Units
V
V
A
A
A
A
W
W/
A
mJ
Units
/W
/W
200319075-1/4

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