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PDF P4004ED Data sheet ( Hoja de datos )
| Número de pieza | P4004ED | |
| Descripción | P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de P4004ED (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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NIKO-SEM
P-Channel Logic Level Enhancement
P4004ED
Mode Field Effect Transistor
TO-252(DPAK)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ
ID
-21A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy 2
Power Dissipation
TC = 25 °C
TC = 70 °C
L = 0.1mH
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Junction & Storage Temperature Range
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-40
±20
-21
-17
-70
-27
36
30
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
4.1 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2VDD = -20V . Starting TJ = 25˚C.
40 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-40
-2.0 -2.5
-3
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 125 °C
1
µA
10
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V
-70
A
REV 1.1
Sep-16-2010
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P4004ED.PDF ] | |
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