|
|
Teilenummer | CEM8531 |
|
Beschreibung | Dual P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Chino-Excel Technology | |
Logo | ||
Gesamt 4 Seiten CEM8531
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V.
RDS(ON) = 60mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
876 5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -30
VGS ±20
ID -5.9
IDM -20
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
2005.March
5 - 166
http://www.cetsemi.com
| ||
Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEM8531 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CEM8531 | Dual P-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |