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Teilenummer | CEM8207 |
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Beschreibung | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Chino-Excel Technology | |
Logo | ||
Gesamt 5 Seiten CEM8207
Feb. 2003
Dual N-Channel Enhancement Mode Field Effect Transistor
5 FEATURES
20V , 6A , RDS(ON)=20m Ω @VGS=4.5V.
RDS(ON)=30m Ω @VGS=2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
D1 D1 D2 D2
87 65
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa
-Pulsed
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
Ć12
Ć6
Ć24
6
2
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
62.5
C/W
5-78
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ CEM8207 Schematic.PDF ] |
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