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Número de pieza | APTGT150TDU60P | |
Descripción | IGBT Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT150TDU60P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTGT150TDU60P
Triple Dual Common Source
Trench + Field Stop IGBT®
Power Module
C1
G1
C3
G3
C5
G5
E1 E3
E1/E2
E2 E4
E3/E4
E5
E6
E5/E6
G2
C2
G4
C4
G6
C6
C1
E1/E2
G1
E1
E2
G2
C2
C3
E3 /E4
G3
E3
E4
G4
C4
C5
E5 /E 6
G5
E5
E6
G6
C6
VCES = 600V
IC = 150A @ Tc = 80°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
225
150
350
±20
480
300A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
1 page APTGT150TDU60P
Operating Frequency vs Collector Current
120
VCE= 300V
100
ZCS
D=50%
RG=6.8Ω
80 TJ=150°C
ZVS
Tc=85°C
60
40 Hard
switching
20
0
0 50 100 150 200
IC (A)
Forward Characteristic of diode
300
250
200
150
100
50
0
0
TJ =125°C
TJ=150°C
TJ =25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.6
0.5 0.9
Diode
0.4 0.7
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT150TDU60P.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT150TDU60P | IGBT Power Module | Advanced Power Technology |
APTGT150TDU60PG | IGBT Power Module | Microsemi |
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