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PDF APTGT150TL60G Data sheet ( Hoja de datos )
| Número de pieza | APTGT150TL60G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTGT150TL60G
Three level inverter
Trench + Field Stop IGBT
Power Module
VBUS
G1
E1
CR5
NEUTRAL
G2
E2
CR6
G3
E3
G4
E4
CR1
Q1
CR2
Q2
OUT
CR3
Q3
CR4
Q4
0/VBUS
VBUS
0/VBUS
G1 G4
E1
NEUTRAL
E4
E2 E3
G2 G3
OUT
VCES = 600V
IC = 150A @ Tc = 80°C
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
200
150
300
±20
480
300A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-7
1 page  
APTGT150TL60G
Output Characteristics (VGE=15V)
250
200
TJ=25°C
TJ=125°C
150 TJ=150°C
100
50
TJ=25°C
0
0 0.5 1 1.5 2 2.5
VCE (V)
Output Characteristics
250
TJ = 150°C VGE=19V
200
VGE=13V
150 VGE=15V
100
VGE=9V
50
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
250
200
150
100
50
0
5
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=150°C
TJ=25°C
6 7 8 9 10 11
VGE (V)
Energy losses vs Collector Current
8
VCE = 300V
VGE = 15V
6 RG = 3.3Ω
TJ = 150°C
Eoff
4
2
Eon
0
0 50 100 150 200 250
IC (A)
Switching Energy Losses vs Gate Resistance
10
8 Eoff
Eoff
6
4
2
Eon
0
VCE = 300V
VGE =15V
IC = 150A
TJ = 150°C
0 5 10 15 20 25
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
350
300
250
200
150
100 VGE=15V
50
TJ=150°C
RG=3.3Ω
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3 0.9
0.25 0.7
0.2 0.5
0.15
0.3
0.1
0.05 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
www.microsemi.com
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTGT150TL60G.PDF ] | |
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