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PDF AP7811GM Data sheet ( Hoja de datos )
| Número de pieza | AP7811GM | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP7811GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Fast Switching
▼ Simple Drive Requirement
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
25V
12mΩ
11.8A
G
G
DD
SS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
25
±12
11.8
9.4
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
20020507
1 page  
AP7811GM
12
I D =11.8A
10
8
6
V DS =10V
V DS =15V
V DS =20V
4
2
0
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0 50 100
Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP7811GM.PDF ] | |
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