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PDF C1360 Data sheet ( Hoja de datos )
| Número de pieza | C1360 | |
| Descripción | NPN Transistor - 2SC1360 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC1360, 2SC1360A
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
s Features
q High transition frequency fT.
q Large collector power dissipation PC.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SC1360
base voltage 2SC1360A
Collector to 2SC1360
emitter voltage 2SC1360A
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
50
60
45
60
4
50
1
150
–55 ~ +150
Unit
V
V
V
mA
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base 2SC1360
voltage
2SC1360A
ICBO
VCBO
VCB = 20V, IE = 0
IC = 100µA, IE = 0
100 nA
50
V
60
Collector to emitter 2SC1360
voltage
VCEO
2SC1360A
IC = 1mA, IB = 0
45
60
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
VEBO
hFE
VCE(sat)
fT
Cre
PG
IE = 100µA, IC = 0
VCB = 10V, IE = –10mA
IC = 20mA, IB = 2mA
VCB = 10V, IE = –10mA, f = 100MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
VCB = 10V, IE = –10mA, f = 58MHz
4
20
300
22
V
100
0.4 V
MHz
1.5 pF
30 dB
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C1360.PDF ] | |
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