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Teilenummer | GT15Q311 |
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Beschreibung | Insulated Gate Bipolar Transistor | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 7 Seiten GT15Q311
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q311
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 3rd generation
· Enhancement-mode
· High speed: tf = 0.32 µs (max)
· Low saturation voltage: VCE (sat) = 2.7 V (max)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector
forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
1200
±20
15
30
15
30
160
150
−55 to 150
Equivalent Circuit
Unit
V
V
A
A
W
°C
°C
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-16H1A
Weight: 3.65 g (typ.)
1 2002-10-29
rth (t) – tw
102
Tc = 25°C
101
Diode stage
100
IGBT stage
10−1
10−2
10−3
101−40−5
10−4
10−3
10−2 10−1
100
101
102
Pulse width tw (s)
GT15Q311
6 2002-10-29
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ GT15Q311 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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