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Número de pieza | GT50J121 | |
Descripción | Insulated Gate Bipolar Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT50J121 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J121
High Power Switching Applications
Fast Switching Applications
Unit: mm
• The 4th generation
• Enhancement-mode
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.05 µs (typ.)
• Low switching loss: Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
• Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
600
±20
50
100
240
150
−55 to 150
Unit
V
V
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
Rth (j-c)
Max
0.521
Unit
°C/W
JEDEC
JEITA
TOSHIBA
Weight: 9.75 g
―
―
2-21F2C
1 2002-03-18
1 page 30000
10000
C – VCE
Cies
3000
1000
300
100
Common emitter
30 VGE = 0
f = 1 MHz
Tc = 25°C
10
0.1 0.3 1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
GT50J121
VCE, VGE – QG
500
Common emitter
RL = 6 Ω
Tc = 25°C
400
300
300
200
200
VCE = 100 V
100
0
0 100 200 300
Gate charge QG (nC)
20
16
12
8
4
0
400
Safe operating area
300
100 IC max (pulse)*
IC max (continuous)
50 µs*
30 100 µs*
10 DC operation
3
*: Single pulse
1 Tc = 25°C
Curves must be
derated linearly with
0.3 increase in
temperature.
0.1
1 3 10
30
1 ms*
10 ms*
100 300 1000
Collector-emitter voltage VCE (V)
Reverse bias SOA
300
100
30
10
3
1
0.3 Tj <= 125°C
VGE = 15 V
0.1 RG = 13 Ω
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
102 Tc = 25°C
101
rth (t) – tw
100
10−1
10−2
10−3
10−140−5
10−4
10−3 10−2 10−1 100
Pulse width tw (s)
101
102
5
2002-03-18
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet GT50J121.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT50J121 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
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