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GT8G133 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer GT8G133
Beschreibung Insulated Gate Bipolar Transistor
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 7 Seiten
GT8G133 Datasheet, Funktion
GT8G133
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G133
Strobe Flash Applications
Compact and Thin (TSSOP-8) package
Enhancement-mode
4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
Peak collector current: IC = 150 A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse
(Note 1)
Symbol
VCES
VGES
VGES
ICP
Rating
400
±6
±8
150
Unit
V
V
A
Collector power
dissipationt10 s
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
PC (1)
PC (2)
Tj
Tstg
1.1
0.6
150
55~150
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
Characteristics
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Symbol
Rth (j-a) (1)
Rth (j-a) (2)
Rating
114
208
Unit
°C/W
°C/W
Marking (Note 3)
Part No. (or abbreviation code)
8G133
Unit: mm
1.2.3 EMITTER
4 GATE
5.6.7.8 COLLECTOR
JEDEC
JEITA
TOSHIBA
2-3R1G
Weight: 0.035 g (typ.)
Circuit Configuration
8765
1234
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02






GT8G133 Datasheet, Funktion
Minimum Gate Drive Area
200
160
Tc = 25°C
120 70
80
40
0
0246
Gate-emitter voltage VGE (V)
8
GT8G133
Maximum Operating Area
800
600
400
VCM = 350 V
200 Tc <= 70°C
VGE = 4.0 V
10 Ω <= RG <= 300 Ω
0
0 40 80 120 160
Peak collector current ICP (A)
200
6 2006-11-02

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