GT10G131 Datasheet PDF - Toshiba Semiconductor
| Part Number | GT10G131 | |
| Description | Insulated Gate Bipolar Transistor | |
| Manufacturers | Toshiba Semiconductor | |
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GT10G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10G131
Strobe Flash Applications
Unit: mm
• Supplied in compact and thin package requires only a small mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
• Peak collector current: IC = 200 A (max)
• Built-in zener diode between gate and emitter
• SOP-8 package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse
(Note 1)
Collector power
dissipation(t=10 s)
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
VCES
VGES
VGES
ICP
PC (1)
PC (2)
Tj
Tstg
400
±6
±8
200
1.9
1.0
150
−55~150
V
V
A
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/
current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/Derating
Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1.2.3 Emitter
4 Gate
5.6.7.8 Collector
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-6J1C
Weight: 0.08 g (typ.)
Circuit Configuration
8765
Thermal Characteristics
Characteristics
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Symbol
Rth (j-a) (1)
Rth (j-a) (2)
Marking (Note 3)
Rating
65.8
125
Unit
°C/W
°C/W
1234
10G131
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02
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VCE (sat) – Tc
4
Common emitter
VGE = 4 V
3
2
1
IC = 200 A
170
150
120
90
60
0
−50 0
50 100 150
Case temperature Tc (°C)
GT10G131
VGE (OFF) – Tc
1.6
Common emitter
VCE = 5 V
IC = 1 mA
1.2
0.8
0.4
0
−50 0
50 100 150
Case temperature Tc (°C)
10000
1000
C – VCE
Cies
100
10
1
Coes
Cres
Common emitter
VGE = 0 V
f = 1 MHz
Tc = 25°C
10 100 1000
Collector-emitter voltage VCE (V)
VCE, VGE – QG
600
Common emitter
500
VCC = 300 V
RL = 1.5 Ω
Tc = 25°C
VGE
400
300
200
VCE
100
0
0 10 20 30 40
Gate charge QG (nC)
6
5
4
3
2
1
0
50
Switching time – RG
10
Common emitter
VCE = 300 V
VGE = 4 V
IC = 200 A
Tc = 25°C
3
ton
tr
toff
tf
1
1 10 100 1000
Gate resistance RG (Ω)
Switching time – IC
10
toff
tf
1
ton
Common emitter
tr VCC = 300 V
VGE = 4 V
RG = 51 Ω
Tc = 25°C
0.1
0 50 100 150 200
Collector current IC (A)
5 2006-11-02
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GT10G131 electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GT10G131.PDF Datasheet ] | |
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