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Teilenummer | GT45F123 |
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Beschreibung | Insulated Gate Bipolar Transistor | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 7 Seiten GT45F123
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT45F123
For PDP-TV Applications
Unit: mm
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• Low input capacitance: Cies = 2700pF (typ.)
• Peak collector current: ICP = 200 A (max)
• TO-220SIS package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 300 V
Gate-emitter voltage
VGES
± 30
V
Collector current
Collector power
dissipation
Pulse
(Note 1)
Tc=25°C
Ta=25°C
ICP
PC
200 A
26
W
2
1. Gate
2. Collector
3. Emitter
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
TOSHIBA
-
-
2-10U1C
temperature, etc.) may cause this product to decrease in the
Weight: 2 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance , junction to case
(Tc = 25°C)
Thermal resistance , junction to
ambient
(Ta = 25°C)
Marking
Symbol
Rth (j-c)
Rth (j-a)
Rating
4.8
62.5
Unit
°C/W
°C/W
45F123
Part No. (or abbreviation code)
Lot code
Note 1: ICP maximum rating(200A) is limited by pulse width (3 μs ).
1
2007-09-13
Safe operating area
1000
IC max (Pulse)200A*
100 3 μs*
10 μs*
100 μs*
10
*Single non-repetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
1
1 10
100
1000
Collector−emitter voltage VCE (V)
GT45F123
10
Tc = 25℃
Infinite Heat Sink
1
rth(j−c) − tw
0.1
0.01
10μ
100μ
1m 10m 100m
Pulse width tw (s)
1
10 100
6 2007-09-13
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ GT45F123 Schematic.PDF ] |
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