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Número de pieza | DMN63D8LDW | |
Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes Incorporated | |
Logotipo | ||
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No Preview Available ! Product Summary
V(BR)DSS
30V
RDS(ON)
4.2Ω @ VGS = 4.5V
2.8Ω @ VGS = 10V
ID
TA = 25°C
200mA
260mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
DMN63D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
SOT363
D2 G1 S1
ESD PROTECTED
Top View
S2 G2 D1
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN63D8LDW-7
DMN63D8LDW-13
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MM4 YM
MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
1 of 6
www.diodes.com
November 2012
© Diodes Incorporated
1 page DMN63D8LDW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
H
K
J
DF
L
M
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
α 0° 8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2 C2
G
Z
Y
X
C1
Dimensions
Z
G
X
Y
C1
C2
Value (in mm)
2.5
1.3
0.42
0.6
1.9
0.65
DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
5 of 6
www.diodes.com
November 2012
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN63D8LDW.PDF ] |
Número de pieza | Descripción | Fabricantes |
DMN63D8LDW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
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