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PDF DMN21D2UFB Data sheet ( Hoja de datos )

Número de pieza DMN21D2UFB
Descripción 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes Incorporated 
Logotipo Diodes Incorporated Logotipo



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Product Summary
V(BR)DSS
20V
RDS(ON) max
0.99@ VGS = 4.5V
1.2@ VGS = 2.5V
2.4@ VGS = 1.8V
3.0@ VGS = 1.5V
ID max
TA = 25°C
760mA
700mA
500mA
350mA
DMN21D2UFB
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 0.6mm
Low Package Profile, 0.5mm Maximum Package height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
Drain
ESD PROTECTED
X1-DFN1006-3
Bottom View
S
D
G
Top View
Package Pin Configuration
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN21D2UFB-7B
Marking
NN
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN21D2UFB
Document number: DS35564 Rev. 5 - 2
DMN21D2UFB-7B
NN NN = Product Type Marking Code
Top View
Bar Denotes Gate and Source Side
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated

1 page




DMN21D2UFB pdf
DMN21D2UFB
1 D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
0.0001
RθJA(t) = r(t) * RθJA
RθJA = 315°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A
A1
E b2
D
L2 L3 L1
b1
e
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
All Dimensions in mm
Suggested Pad Layout
X1
X G2
C
G1
Y
Z
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
DMN21D2UFB
Document number: DS35564 Rev. 5 - 2
5 of 6
www.diodes.com
May 2012
© Diodes Incorporated

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