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PDF PMK35EP Data sheet ( Hoja de datos )
| Número de pieza | PMK35EP | |
| Descripción | P-channel TrenchMOS extremely low level FET | |
| Fabricantes | NXP Semiconductors | |
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PMK35EP
P-channel TrenchMOS extremely low level FET
Rev. 02 — 29 April 2010
Product data sheet
1. Product profile
1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
1.3 Applications
Battery management
Load switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
25 °C ≤ Tj ≤ 150 °C
voltage
ID
drain current
Tsp = 25 °C; VGS = -10 V; see
Figure 1; see Figure 3
Ptot
total power
Tsp = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = -10 V; ID = -9.2 A;
Tj = 25 °C; see Figure 9
Dynamic characteristics
QGD
gate-drain charge VGS = -10 V; ID = -9.2 A;
VDS = -15 V; Tj = 25 °C;
see Figure 11; see Figure 12
Min Typ Max Unit
- - -30 V
- - -14. A
9
- - 6.9 W
- 16 19 mΩ
- 6 - nC
1 page  
NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
VGS(pl)
gate-source plateau
voltage
ID = -9.2 A; VDS = -15 V; Tj = 25 °C;
see Figure 11; see Figure 12
Ciss input capacitance
Coss output capacitance
Crss reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VDS = -25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
VDS = -25 V; RL = 6 Ω; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
VSD source-drain voltage IS = -3.45 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
Min Typ Max Unit
- -2.5 - V
- 2100 - pF
- 365 - pF
- 275 - pF
- 9 - ns
- 9 - ns
- 50 - ns
- 24 - ns
- -0.8 -1.2 V
−30
ID
(A)
−20
VGS (V) = −5
−4
003aab606
−3.5
−30
ID
(A)
−20
003aab608
−10 −10
−3
Tj = 150 °C
25 °C
−2.8
0
0 −0.5 −1 −1.5 −2
VDS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
0
0 −1 −2 −3 −4
VGS (V)
VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PMK35EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PMK35EP
P-channel TrenchMOS extremely low level FET
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMK35EP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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