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| Número de pieza | PSMN050-80PS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET
Rev. 2 — 28 November 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 80 V
- - 22 A
- - 56 W
RDSon
drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 25 °C
Dynamic characteristics
[1] -
37 46 mΩ
QGD gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 40 V;
see Figure 14; see Figure 15
- 2.3 - nC
[1] Measured 3 mm from package.
1 page  
NXP Semiconductors
PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11; see Figure 12
73 - - V
80 - - V
1- - V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11; see Figure 12
- - 4.6 V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
234V
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG internal gate resistance (AC)
Dynamic characteristics
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 10 A; Tj = 100 °C;
see Figure 13
VGS = 10 V; ID = 10 A; Tj = 25 °C
f = 1 MHz
-
-
-
-
-
[1] -
-
- 1 µA
- 15 µA
- 100 nA
- 100 nA
- 74 mΩ
37 46 mΩ
2-
Ω
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold gate-source
charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14
- 9 - nC
- 11 - nC
- 3.8 - nC
- 1.9 - nC
QGS(th-pl)
post-threshold gate-source
charge
- 1.9 - nC
QGD gate-drain charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
- 2.3 - nC
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 40 V
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 17
VDS = 12 V; RL = 0.5 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
- 5.2 - V
- 633 - pF
- 100 - pF
- 50 - pF
- 9.2 - ns
- 1 - ns
- 16 - ns
- 2.4 - ns
PSMN050-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN050-80PS
N-channel 80 V 46 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
PSMN050-80PS v.2
Modifications:
20111128
Product data sheet
• Various changes to content.
PSMN050-80PS v.1 20090610
Product data sheet
Change notice
-
-
Supersedes
PSMN050-80PS v.1
-
PSMN050-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 November 2011
© NXP B.V. 2011. All rights reserved.
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