PDF PSMN3R5-80PS Data sheet ( Hoja de datos )

Número de pieza	PSMN3R5-80PS
Descripción	MOSFET ( Transistor )
Fabricantes	NXP Semiconductors
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No Preview Available ! PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 Rev. 03 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.3 Applications DC-to-DC converters Load switch Motor control Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Min Typ Max Unit - - 80 V [1] - - 120 A Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics Tmb = 25 °C; see Figure 2 -- -55 - 338 W 175 °C VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 [2] - - 5 5.8 mΩ 3 3.5 mΩ QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 40 V; see Figure 14; see Figure 15 - 27 - nC - 139 - nC Avalanche ruggedness EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; avalanche energy ID = 120 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped - - 676 mJ 1 page NXP Semiconductors PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 4 Vertical in free air Min Typ Max Unit - 0.22 0.44 K/W - 60 - K/W 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 0.02 003aaf613 P tp δ= T single shot tp t 10-3 T 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN3R5-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 5 Page NXP Semiconductors PSMN3R5-80PS N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 EA p A1 q mounting D1 base D L1(1) b1(2) L (3×) b2(2) (2×) L2(1) 1 23 ee b(3×) Q c 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 1.40 0.9 4.1 1.25 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION IEC REFERENCES JEDEC JEITA EUROPEAN PROJECTION SOT78 3-lead TO-220AB SC-46 Fig 18. Package outline SOT78 (TO-220AB) ISSUE DATE 08-04-23 08-06-13 PSMN3R5-80PS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 19 April 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 11 Page

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