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PDF PMGD130UN Data sheet ( Hoja de datos )
| Número de pieza | PMGD130UN | |
| Descripción | dual N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMGD130UN
20 V, dual N-channel Trench MOSFET
Rev. 1 — 1 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching sircuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
RDSon
drain-source on-state VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C
resistance
Min Typ Max Unit
--
-8 -
[1] -
-
20 V
8V
1.3 A
- 118 145 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
1 page  
NXP Semiconductors
PMGD130UN
20 V, dual N-channel Trench MOSFET
103 017aaa578
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102 0.2
0.25
0.1
0.05
0.02
0 0.01
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa579
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102
0.2
0.25
0.1
0.05
10
10-3
0
0.02
0.01
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMGD130UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
PMGD130UN
20 V, dual N-channel Trench MOSFET
2.65
2.35 1.5 0.6 0.5
(4×) (4×)
0.4 (2×)
0.5 0.6
(4×) (2×)
0.6
(4×)
1.8
Fig 19. Reflow soldering footprint for SOT363 (TSSOP6)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot363_fr
1.5
4.5 0.3 2.5
1.5
1.3 1.3
2.45
5.3
Fig 20. Wave soldering footprint for SOT363 (TSSOP6)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
PMGD130UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 June 2012
© NXP B.V. 2012. All rights reserved.
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMGD130UN.PDF ] | |
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