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PDF PMN25EN Data sheet ( Hoja de datos )
| Número de pieza | PMN25EN | |
| Descripción | 6.2A N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMN25EN
30 V, 6.2 A N-channel Trench MOSFET
Rev. 1 — 29 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 6.2 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 6.2 A
- 20 23 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
D
G
S
017aaa253
1 page  
NXP Semiconductors
PMN25EN
30 V, 6.2 A N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
Min Typ Max Unit
[1] -
200 230 K/W
[2] -
78 90 K/W
- 15 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 017aaa209
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02 0.01
0
1
10–3
10–2
10–1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.5
0.25
0.75
0.33
0.2
10 0.1
0.05
017aaa210
0.02
0 0.01
1
10–3
10–2
10–1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN25EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 August 2011
© NXP B.V. 2011. All rights reserved.
5 of 17
5 Page 
NXP Semiconductors
8. Test information
Fig 17. Duty cycle definition
PMN25EN
30 V, 6.2 A N-channel Trench MOSFET
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
PMN25EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 August 2011
© NXP B.V. 2011. All rights reserved.
11 of 17
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| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet PMN25EN.PDF ] | |
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