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PDF PSMN012-80PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN012-80PS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 80 V
- - 74 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 148 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
- 9.4 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 25 °C;
[1] -
9 11 mΩ
[1] Measured 3 mm from package.
1 page  
NXP Semiconductors
PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11; see Figure 12
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11; see Figure 12
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 13
VGS = 10 V; ID = 15 A; Tj = 25 °C
RG internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold
gate-source charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th-pl) post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
VDS = 40 V
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 12 V; RL = 0.5 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
Min Typ Max Unit
73
80
1
-
2
-
-
-
-
-
[2] -
-
--V
--V
--V
- 4.6 V
34V
-3
- 60
- 100
- 100
- 18
9 11
0.97 -
µA
µA
nA
nA
mΩ
mΩ
Ω
- 36 - nC
- 43 - nC
- 12 - nC
- 8 - nC
- 4 - nC
- 9.4 - nC
- 4.5 - V
- 2782 - pF
- 384 - pF
- 162 - pF
- 19 - ns
- 16 - ns
- 33 - ns
- 6 - ns
PSMN012-80PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
PSMN012-80PS_2
Modifications:
20090625
Product data sheet
• Various changes to content.
PSMN012-80PS_1
20090609
Product data sheet
Change notice
-
-
Supersedes
PSMN012-80PS_1
-
PSMN012-80PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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