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Teilenummer | D1670 |
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Beschreibung | NPN Transistor - 2SD1670 | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1670
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain-
: hFE= 1000( Min.) @ IC= 10A
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 10A
APPLICATIONS
·For low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
150 V
wwwVCEO Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
8V
IC Collector Current-Continuous
±10
A
ICM Collector Current-Peak
±20
A
IB Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
1A
3.5
W
65
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ D1670 Schematic.PDF ] |
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