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C650 Schematic ( PDF Datasheet ) - Bourns

Teilenummer C650
Beschreibung high-speed bidirectional protection components
Hersteller Bourns
Logo Bourns Logo 




Gesamt 6 Seiten
C650 Datasheet, Funktion
Features
Formerly
brand
Extremely high speed performance
Blocks high voltages and currents
Very high bandwidth; GHz compatible
Small package, minimal PCB area
Simple, superior circuit protection
RoHS compliant*, UL Recognized
The C650 & C850 Series are currently
available, but not recommended for
new designs. Bourns® TBU-CA
Series is preferred.
C650 and C850 Series TBU® High-Speed Protectors
Transient Blocking Units - TBU® Devices
Bourns® C650 and C850 series products are high-speed
bidirectional protection components, constructed using
MOSFET semiconductor technology, designed to protect
against faults caused by short circuits, AC power cross,
induction and lightning surges.
The TBU® high-speed protector, triggering as a function of
the MOSFET, blocks surges and provides an effective barrier
behind which sensitive electronics are not exposed to large
voltages or currents during surge events. The TBU® device is
provided in a surface mount DFN package and meets industry
standard requirements such as RoHS and Pb Free solder
reflow profiles.
Agency Approval
UL recognized component File # E315805.
Industry Standards
Telcordia
ITU-T
Description
GR-1089 Port Type 1, 3, 5
GR-974
K.20, K.20E, K.21, K.21E, K.45
Model
C650
C850
C650
C850
C850
Absolute Maximum Ratings (Tamb = 25 °C)
Symbol Parameter
Vimp
Maximum protection voltage for impulse faults with rise time 1 µsec
Vrms
Top
Tstg
Maximum protection voltage for continuous Vrms faults
Operating temperature range
Storage temperature range
C650-xxx-WH
C850-xxx-WH
C650-xxx-WH
C850-xxx-WH
Electrical Characteristics (Tamb = 25 °C)
Symbol
Iop
Itrigger
Iout
Rdevice
tblock
Iquiescent
Vreset
Parameter
Maximum current through the device that will not cause
current blocking
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Typical current for the device to go from normal operating
state to protected state
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Maximum current through the device
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Series resistance of the TBU® device
C650-100-WH
C650-180-WH
C650-260-WH
C850-100-WH
C850-180-WH
C850-260-WH
Maximum time for the device to go from normal operating
state to protected state
Current through the triggered TBU® device with 50 Vdc circuit
voltage
Voltage below which the triggered TBU® device will transition to
normal operating state
Min.
C650 and C850 TBU® High-Speed Protectors are bidirectional; specifications are valid in both directions.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Value
650
850
300
425
-40 to +85
-65 to +150
Unit
V
V
°C
°C
Typ.
150
220
330
12
8
8
17
11
11
1
14
Max.
100
180
260
200
360
520
14.5
10
10
19
14
14
1
Unit
mA
mA
mA
Ω
µs
mA
V






C650 Datasheet, Funktion
C650 and C850 Series TBU® High-Speed Protectors
Reference Application
The C-series devices are general protectors that can be used in a variety of applications. The basic operation of the device will be
demonstrated using the single line application shown in the figure below. The test circuit was subjected to a 1000 V, 10/700 µs surge
waveform. The devices used were the TBU-C850-100-WH and a 2031-42T-SM-RPLF GDT (OVP) with a 10 ohm resistor for the load
impedance.
Line
OVP TBU® Device
ZLOAD
General Application Circuit
The graph below shows the waveforms for the voltage across the overvoltage protector (GDT) and the current through the TBU®
device. As the input line voltage increases, the current through the TBU® device increases rapidly until the trip current is reached. Due
to finite reaction time for fast transients, the peak level may exceed the low frequency data sheet maximum for a very short period,
typically ~100 ns. After this initial overshoot, the TBU® device will transition to the protected state, setting the current to the nominal
current limiting level (~150 mA for this example). The TBU® device will then reduce the current down it to its very low quiescent level
of 1 mA, typically. As the input line voltage increases to about 500 V, the GDT is triggered, reducing the input line voltage to a very low
level which prevents the TBU® device from being subjected to a voltage level which exceeds its maximum rating (850 V in this
example). The TBU® High-Speed Orotector and the GDT will remain in these states until the surge ends, which is about 700 µs later
in this example. Only the first 4 µs of the surge are shown in the graph. For surges or AC voltages below the GDT breakover voltage,
the GDT will not activate, and the TBU® device will stay in the protecting mode, blocking high voltages from the protected equipment.
900
800
700
600
500
400
300
200
100
0
100
0
0.5 1
TBU® Device Current
GDT Voltage
1.5 2 2.5 3 3.5
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
4
Time (µs)
TBU-C850-100-WH Response to a 1000 V, 10/700 µs Surge
REV. 06/12
“TBU” is a registered trademark of Bourns, Inc. in the United States and other countries.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

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