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PDF A1320 Data sheet ( Hoja de datos )
| Número de pieza | A1320 | |
| Descripción | PNP Transistor - 2SA1320 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1320 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1320
2SA1320
High Voltage Switching Applications
Color TV Chroma Output Applications
Unit: mm
• High voltage: VCEO = −250 V
• Low Cre: 1.8 pF (max)
• Complementary to 2SC3333
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−250
V
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
VCEO
VEBO
IC
ICP
−250
−5
−50
−100
V
V
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB −20 mA
PC 0.6 W
Tj 150 °C
Tstg
−55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Reverse transfer capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE
fT
Cre
VCB = −200 V, IE = 0
VEB = −5 V, IC = 0
IC = −1 mA, IB = 0
VCE = −20 V, IC = −25 mA
IC = −10 mA, IB = −1 mA
VCE = −20 V, IC = −25 mA
VCE = −10 V, IC = −10 mA
VCB = −30 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
−250
50
⎯
⎯
60
⎯
⎯
⎯
⎯
⎯
⎯
−0.75
80
⎯
−0.1
−0.1
⎯
⎯
−1.5
⎯
⎯
1.8
μA
μA
V
V
V
MHz
pF
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet A1320.PDF ] | |
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