EMP8734-18VI05NRR Datasheet PDF - Elite Semiconductor
| Part Number | EMP8734-18VI05NRR | |
| Description | 300mA CMOS Linear Regulator | |
| Manufacturers | Elite Semiconductor | |
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There is a preview and EMP8734-18VI05NRR download ( pdf file ) link at the bottom of this page. Total 15 Pages | ||
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ESMT/EMP
EMP8734
Fast Ultra High-PSRR, Low-Noise, 300mA
CMOS Linear Regulator
General Description
The EMP8734 features ultra-high power supply rejection
ratio, low output voltage noise, low dropout voltage,
low quiescent current and fast transient response. It
guarantees delivery of 300mA output current and
supports preset output voltages ranging from 0.8V to
4.5V with 0.05V increment.
Based on its low quiescent current consumption and its
less than 1μA shutdown mode of logical operation, the
EMP8734 is ideal for battery-powered applications. The
high power supply rejection ratio of the EMP8734 holds
well for low input voltages typically encountered in
battery-operated systems. The regulator is stable with
small ceramic capacitive loads (1µF typical). The
EMP8734 is Available in miniature SOT-23-5
SOT-353(SC-70-5 ), SOT-343 and TDFN-6 packages.
300mA guaranteed output current
62dB typical PSRR at 1kHz
110µV RMS output voltage noise (10Hz to 100kHz)
290mV typical dropout at 300mA
57µA typical quiescent current
Less than 1μA typical shutdown mode
Fast line and load transient response
2.2V to 5.5V input range
Auto-discharge during chip disable
80µs typical turn-on time
Stable with small ceramic output capacitors
Over temperature and over current protection
±2% output voltage tolerance
Applications
Wireless handsets
PCMCIA cards
DSP core power
Hand-held instruments
Battery-powered systems
Portable information appliances
Features
Typical Application
*Use 2.2μF for VOUT < 1.2V
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Mar. 2011
Revision : 2.3
1/15
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ESMT/EMP
Absolute Maximum Ratings (Notes 1, 2)
EMP8734
VIN, VOUT, VEN
Storage Temperature Range
Junction Temperature (TJ)
Lead Temperature (10 sec.)
ESD Rating
Human Body Model
MM
-0.3V to 6.5V
-65°C to160°C
150°C
240°C
2kV
200V
Thermal Resistance (θJA)
SOT-23-5
SOT-343/SOT-353
TDFN-6
Operating Ratings (Note 1, 2)
Temperature Range
Supply Voltage
250°C/W
(Note 6)
(Note 6)
-40°C to 85°C
2.2V to 5.5V
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for VIN = VOUT +1V (Note 3), VEN=VIN, CIN = COUT = 2.2µF, TA = 25°C.
Boldface limits apply for the operating temperature extremes: -40°C and 85°C.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VIN Input Voltage
2.2 5.5 V
VOUT
Output Voltage
0.8 4.5 V
ΔVOTL
1mA ≤ IOUT ≤ 300mA
Output Voltage Tolerance VOUT (NOM) +1V ≤ VIN ≤ 5.5V
(Note 3)
-2
-3
+2 % of
+3 VOUT (NOM)
IOUT Maximum Output Current Average DC Current Rating 300
mA
ILIMIT Output Current Limit
300 450
mA
Supply Current
IQ
IOUT = 0mA
IOUT = 300mA
57
130 µA
Shutdown Supply Current VOUT = 0V, EN = GND
0.001
1
IOUT = 100mA
VDO Dropout Voltage (Note4)
IOUT = 300mA
90
mV
290
ΔVOUT
Line Regulation
IOUT = 1mA, (VOUT + 1V) ≤ VIN ≤
5.5V (Note 3)
-0.1
0.01
0.1 %/V
Load Regulation
1mA ≤ IOUT ≤ 300mA
0.0008
%/mA
VOUT=2.5V, IOUT = 10mA, 10Hz ≤
en Output Voltage Noise
f ≤ 100kHz
110
µVRMS
Thermal Shutdown
Temperature
TSD
Thermal Shutdown
Hysteresis
165
℃
35
VEN EN Input Threshold
VIH, (VOUT + 1V) ≤ VIN ≤ 5.5V
(Note 3)
VIL, (VOUT + 1V) ≤ VIN ≤ 5.5V
(Note 3)
1.2
V
0.4
IEN EN Input Bias Current
EN = GND or VIN
0.1 100 nA
TON Turn-On Time
VOUT at 95% of Final Value
80 µs
TOFF Turn-Off Time
IOUT=0mA (Note 5)
2.4 ms
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications do not
apply when operating the device outside of its rated operating conditions.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Mar. 2011
Revision : 2.3
5/15
Preview 5 Page |
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