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EMP8110-XXVEJ3NRR Schematic ( PDF Datasheet ) - Elite Semiconductor

Teilenummer EMP8110-XXVEJ3NRR
Beschreibung 1.5A Fixed Voltage LDO Linear Regulator
Hersteller Elite Semiconductor
Logo Elite Semiconductor Logo 




Gesamt 16 Seiten
EMP8110-XXVEJ3NRR Datasheet, Funktion
ESMT
Preliminary
EMP8110
1.5A Fixed Voltage LDO Linear Regulator
General Description
The EMP8110 is a CMOS low-dropout linear
regulator that operates in the input voltage range
from +2.5V to +6.5V and delivers 1.5A output
current.
The EMP8110 features include short-circuit
protection and thermal shutdown protection. The
EMP8110 series devices are available in both of
SOT-223 and TO-252 packages.
Applications
Active SCSI Terminators
High Efficiency Linear Regulators
Monitor Microprocessors
Low Voltage Micro-Controllers
Post Regulator for Switching Power
Features
Operating Voltage Range+2.5V to +6.5V
Output Voltages+1.2V to +4.5V (0.1V Step)
Maximum Output Current1.5A
Dropout Voltage570mV @ 1.5A(Vout=1.8V)
Low Current Consumption65µA (Typ.)
±2% Output Voltage Accuracy
Low ESR Capacitor Compatible
High Ripple Rejection60 dB (Vout=1.8V)
Fold back short circuit protection
Thermal Overload Shutdown Protection
SOT-223 and TO-252 Packages
RoHS Compliant and 100% Lead (Pb)-Free
and Green (Halogen Free with Commercial
Standard)
Typical Application
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2013
Revision: 0.2
1/16






EMP8110-XXVEJ3NRR Datasheet, Funktion
ESMT
Preliminary
EMP8110
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications do not
apply when operating the device outside of its rated operating conditions.
Note 2: All voltages are with respect to the potential at the ground pin.
Note 3: θJA is measured in the natural convection at TA=25on a high effective thermal conductivity test board (2
layers, 2S0P).
Note 4: Condition does not apply to input voltages below 2.2V since this is the minimum input operating voltage.
Note 5: Dropout voltage is measured by reducing VIN until VOUT drops 100mV from its nominal value at VIN -VOUT = 1V.
Dropout voltage does not apply to the regulator versions with VOUT less than 2.2V.
Note 6: Turn-off time is time measured between the enable input just decreasing below VIL and the output voltage just
decreasing to 10% of its nominal value.
Note 7: Maximum Power dissipation for the device is calculated using the following equations:
PD
TJ(MAX)
θJA
-
TA
Where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θ JA is the
junction-to-ambient thermal resistance. E.g. for the SOT-223 packageθJA = 110°C/W, TJ (MAX) = 150°C and
using TA = 25°C, the maximum power dissipation is found to be 1.136W. The derating factor (-1/θJA) =
-9.09mW/°C, thus below 25°C the power dissipation figure can be increased by 9.09mW per degree, and
similarity decreased by this factor for temperatures above 25°C.
Note 8: Typical Values represent the most likely parametric norm
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2013
Revision: 0.2
6/16

6 Page









EMP8110-XXVEJ3NRR pdf, datenblatt
ESMT
Package Outline Drawing
SOT-223
Preliminary
EMP8110
Symbol
A
A1
b
b1
c
D
E
E1
e
L
Dimension in mm
Min. Max.
-- 1.80
0.02 0.10
0.60 0.80
2.90 3.10
0.23 0.35
6.30 6.80
3.30 3.70
6.70 7.30
2.30 BSC
0.90 --
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2013
Revision: 0.2
12/16

12 Page





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