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PDF EMP8020-31VF05NRR Data sheet ( Hoja de datos )
| Número de pieza | EMP8020-31VF05NRR | |
| Descripción | 300mA CMOS Linear Regulator | |
| Fabricantes | Elite Semiconductor | |
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ESMT/EMP
Preliminary
EMP8020
Fast Ultra High-PSRR, Low-Noise, Low-Dropout,
300mA CMOS Linear Regulator
General Description
The EMP8020 low-dropout (LDO) CMOS linear regulator
features an ultra-high power supply rejection ratio (78dB
at 1kHz), low output voltage noise (48µV), low dropout
voltage, low quiescent current (50µA), and fast
transient response. It guarantees a delivery of 300mA
output current, and supports preset output voltages
ranging from 0.8V to 4.75V with 0.05V increments.
The EMP8020 is ideal for battery-powered applications
because of its low quiescent current consumption and
its 1nA shutdown mode. The regulator provides fast
turn-on and start-up time by using dedicated circuitry to
pre-charge an optional external bypass capacitor. This
bypass capacitor is used to reduce the output voltage
noise without adversely affecting the load transient
response. The high power supply rejection ratio of the
EMP8020 holds well for low input voltages typically
encountered in battery operated systems. The regulator
is stable with small ceramic capacitive loads (2.2µF
typical).
Additional features include bandgap voltage
reference, constant current limiting, and thermal
overload protection. Both of Miniature 5-pin
SC-70-5/SOT-23-5 and 4-pin SC-82-4 package options
are offered to provide flexibility for different
applications.
Applications
Wireless handsets
PCMCIA cards
DSP core power
Hand-held instruments
Battery-powered systems
Portable information appliances
Features
Miniature SC-70-5,SOT-23-5 and SC-82-4
packages
300mA guaranteed output current
PSRR 78dB typical at 1kHz
70dB typical at 10kHz
48µV RMS output voltage noise (10Hz to 100kHz)
(Vout=2.8V, Cbypass=10nF)
305mV typical dropout at 300mA (Vout=2.8V)
50µA typical quiescent current
1nA typical shutdown mode
Fast line and load transient response
140µs typical fast turn-on time (Vout=2.8V,
Cbypass=10nF)
2.2V to 5.5V input range
Stable with small ceramic output capacitors
Over-temperature and over-current protection
±2% output voltage tolerance
Typical Application
EMP8020
15
VIN VIN VOUT
1uF
3
ON/OFF
EN
* Use 2.2uF for VOUT < 1.2V
CC (NC)
GND
2
4
10nF
VOUT
1uF *
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Mar. 2011
Revision: 0.7
1/15
1 page  
ESMT/EMP
Preliminary
EMP8020
Absolute Maximum Ratings (Notes 1, 2)
VIN, VOUT, VEN
-0.3V to 6.0V
Power Dissipation
(Note 4)
Storage Temperature Range
-65°C to 150°C
Junction Temperature (TJ)
150°C
Lead Temperature (Soldering, 10 sec.)
ESD Rating
Human Body Model (Note 6)
MM
260°C
2KV
200V
Operating Ratings (Note 1, 2)
Supply Voltage
Storage Temperature Range
2.2V to 5.5V
-40°C to 85°C
Thermal Resistance (θJA))
SC-70-5
SOT-23-5
331°C /W (Note. 3)
124°C /W (Note. 3)
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for VIN = VOUT +1V (Note 7), VEN = VIN, CIN = COUT = 2.2µF, CCC = 33nF, TJ =
25°C. Boldface limits apply for the operating temperature extremes: -40°C and 85°C.
Symbol
Parameter
Conditions
Typ
Min
Max
Units
(Note 5)
VIN Input Voltage
2.2 5.5 V
ΔVOTL
100µA ≤ IOUT ≤ 300mA
Output Voltage Tolerance VOUT (NOM) +0.5V ≤ VIN ≤ 5.5V
(Note 7)
-2
-3
+2
% of
VOUT (NOM)
+3
IOUT Maximum Output Current Average DC Current Rating 300
mA
ILIMIT Output Current Limit
358 489 622 mA
Supply Current
IQ
IOUT = 0mA
IOUT = 300mA
50
120 µA
Shutdown Supply Current VOUT = 0V, EN = GND
0.001
1
Vout=1.8V
395
Vout=2.5V
310
Dropout Voltage
VDO
(Note 8)
Vout=2.8V
Vout=3.0V
IOUT =300mA
305
297
mV
Vout=3.1V
274
Vout=3.3V
267
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Mar. 2011
Revision: 0.7
5/15
5 Page 
ESMT/EMP
Package Outline Drawing
SC-70-5
Preliminary
EMP8020
θ2
SYMBPLS
A
A1
A2
B
C
D
E
E1
E
e1
L
L1
θ°
θ2°
MIN.
0.8
0
0.8
0.15
0.08
1.85
1.8
1.10
0.26
0
4
NOM. MAX.
－ 1.10
－ 0.10
0.90
－
1.00
0.30
－ 0.22
2.00 2.15
2.10 2.40
1.25 1.40
0.65 BSC
1.30 BSC
0.36 0.46
0.42 REF
48
－ 12
UNIT: MM
θo
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Mar. 2011
Revision: 0.7
11/15
11 Page | ||
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