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EMA2011 Schematic ( PDF Datasheet ) - Elite Semiconductor

Teilenummer EMA2011
Beschreibung 2.7W Mono Filter-less Class-D Audio Amplifier
Hersteller Elite Semiconductor
Logo Elite Semiconductor Logo 




Gesamt 18 Seiten
EMA2011 Datasheet, Funktion
ESMT/EMP
EMA2011
2.7W Mono Filter-less Class-D Audio Amplifier
Features
z Supply voltage range: 2.5 V to 5.5 V
z Support single-ended or differential analog
input
z Low static operation current
z Low shut-down current
z Short power-on transient time
z Internal pull-low resistor on shut-down pins
z Short-circuit protection
z Over-temperature protection
z Loudspeaker power within 10% THD+N
„ 1.66W/ch into 8Ω loudspeaker
„ 2.70W/ch into 4Ω loudspeaker
z Loudspeaker efficiency
„ 90% @ 8Ω, THD+N=10%
„ 85% @ 4Ω, THD+N=10%
z MSOP-8, TDFN-9 and WLCSP-9 packages
z Integrated de-pop circuitry
z Internal generated 450kHz switching
frequency
Applications
z Monitor audio
z PDA
z Portable multimedia devices
z Notebook computer
z Mobile phone
Description
The EMA2011 is a mono, filter-less class-D
audio amplifier. Operating with 5.0V loudspeaker
driver supply, it can deliver 2.7W output power
into 4 Ω loudspeaker within 10% THD+N or 2.2W
at 1% THD+N.
The EMA2011 is a mono audio amplifier with
high efficiency and suitable for the notebook
computer, and portable multimedia device.
Functional Block Diagram
Gain=300k /Rin
+ Cin
Differential
input
- Cin
Rin INP
Rin
INN
SD
~300k
+-
-+
PWM
Generator
~300k
-wave
Generator
~300k
Loudspeaker
Driver
Overload, Voltage
& Thermal
Protection
VDD
Cs
VOP
VON
GND
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jul. 2010
Revision: 2.1
1/18






EMA2011 Datasheet, Funktion
ESMT/EMP
o
General Electrical Characteristics (TA=25 C)
SYMBOL
PARAMETER
CONDITION
Iq
Operating current
VDD=SD=5V
IPD
Voffset
Tsd
Thys
fsw
Supply current during
power-down mode
VDD=5.0V;
SD#=0
Output offset voltage
Input ac grounded,
VDD=2.5V ~ 5.0V
Junction temperature for
driver shutdown
Temperature hysteresis for
recovery from shutdown
Switching rate of
loudspeakers driver
Ton
Turn-on time
VDD = 3.6 V
Loudspeaker short-circuit
RSC
detect resistance
VDD = 5.0 V
EMA2011
MIN TYP MAX UNIT
5.7 mA 
2 50 μΑ
5 25 mV
145 150 155 oC
115 120 125 oC
300 450 600 kHz
1 4 msec
2.8 3.2 ohm 
Electrical Characteristics and Specifications for Loudspeaker
z Gain= 2 V/V, Load=8Ω, fin=1 kHz (unless otherwise noted)
SYMBOL
PARAMETER
CONDITION
MIN TYP MAX UNIT
VDD=5.0V
THD+N = 10 %
THD+N = 1 %
1.66
1.35
W
W
THD+N = 10 %
0.85
W
PO RMS Output Power VDD=3.6V
THD+N = 1 %
0.68
W
VDD=2.5V
THD+N = 10 %
THD+N = 1 %
0.39
0.31
W
W
THD+N
Total Harmonic Distortion plus
Noise
VDD=5.0V, Po=1.0W
VDD=3.6V, Po=0.5W
VDD=2.5V, Po=0.2W
0.24
0.34
0.4
%
%
%
SNR
Signal to Noise Ratio
VDD=5.0V, Po=1.0W
94 dB
VDD=3.6V, Vripple=200mVpp
PSRR
Power Supply Rejection Ratio Inputs ac grounded with Ci=2μF
-60 dB
f=217 Hz
CMRR
Vn
η
Common-Mode Rejection Ratio
Output integrated noise
(A-weighted)
Efficiency
VDD=3.6V, VIC=1Vpp, f=217Hz
VDD=3.6V
fin=20Hz ~ 20kHz
VDD=5V, THD+N=10%
-50
80
88.5
dB
μV
%
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jul. 2010
Revision: 2.1
6/18

6 Page









EMA2011 pdf, datenblatt
ESMT/EMP
EMA2011
Operation Descriptions
z Self-protection circuits (Typical values are used below.)
EMA2011 has built-in over-temperature, overload and under-voltage detectors.
(i) If the internal junction temperature is higher than 150oC, the outputs of
loudspeaker drivers will be disabled and connected to ground and the
temperature hysteresis for EMA2011 to return to normal operation is about 30oC.
The variation of protected temperature is around 10%.
(ii) To protect loudspeaker drivers from current damage when the wires connected
to loudspeakers are shorted to one another or shorted to GND, circuits for the
detection of output loading are built in the EMA2011. For normal operation,
loudspeaker resistance is larger than 3.2Ω is required. Otherwise, overload
detectors may activate. Once overload detector is active, loudspeaker drivers
will be disabled and at low state. EMA2011 will be recovery from overload fault
by pulling SD# down to low and back to high after removing the short. Once the
lines connected to loudspeakers are shorted to VDD, EMA2011 will be burnt.
(iii) When the VDD voltage is lower than 2.1V, EMA2011 will disable and
loudspeaker drivers are at low state, cease EMA2011 beside voltage detector
circuit. When VDD becomes larger than 2.2V, EMA2011 will return to normal
operation.
z Anti-pop design
EMA2011 is with anti-pop design. Annoying pop sounds during initial power on and
power down/up are suppressed. When one of the operations mentioned above is
applied, EMA2011 will internally generate appropriate control signals to suppress
pop sounds.
Application Circuit Information
z Input resistors (Rin) and input capacitors (Cin)
The total gain of the audio amplifier (EMA2011) is set by input resistor (Rin)
according to the following equation (a). The performance at low frequency (bass) is
affected by the corner frequency (fc) of the high-pass filter composed of input
resistors (Rin) and input capacitors (Cin), determined in equation (b).
( )Gain = 300kΩ
Rin
V
V
LLL (a)
fc
=
1
2πRinCin
(Hz)
LLL (b)
For differential audio signal application, the input capacitors (Cin), for DC decoupling,
are not required. When single-ended audio source is used, the input capacitors (Cin)
are required.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jul. 2010
Revision: 2.1
12/18

12 Page





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