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PDF EMA2004-50FF08NRR Data sheet ( Hoja de datos )
| Número de pieza | EMA2004-50FF08NRR | |
| Descripción | 2.7W Mono Fully Differential Audio Power Amplifier | |
| Fabricantes | Elite Semiconductor | |
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ESMT/EMP
EMA2004
- 2.7W Mono Fully Differential Audio Power Amplifier
General Description
The EMA2004 is a 2.7W mono fully differential amplifier
designed to drive a speaker with at least 4Ω
impedance while consuming only 20 mm2 total
PCB area in most applications. The device operates
from 2.5 V to 5.5 V, drawing only 5mA of quiescent
supply current. The EMA2004 is available in the
space-saving 3 mm x 3 mm TDFN package.
The EMA2004 is ideal for PDA/smart phone applications
due to features such as -70dB supply voltage rejection
from 20 Hz to 2 kHz, improved RF rectification immunity,
small PCB area, and a fast startup with minimal pop.
Features
．Designed for Wireless or Cellular Handsets and PDAs
．2.7 W Into 4Ω From a 5-V Supply at THD = 10% (Typ)
．Low Supply Current: 5mA (Typ) at 5 V
．Shutdown Current: 0.1 μA (Typ)
．Fast Startup With Minimal Pop
．Only Three External Components
．Improved PSRR (-70 dB) and Wide Supply Voltage (2.5
V to 5.5 V) for Direct Battery Operation
．Fully Differential Design Reduces RF Rectification
．-63 dB CMRR Eliminates Two Input Coupling Capacitors
．Pin to Pin Compatible With TPA6204A1 in TDFN
Package
．Available in 3 mm X 3 mm TDFN Package
Applications
． Ideal for Wireless Handsets
． PDAs
． Notebook Computers
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Oct. 2010
Revision: 4.1
1/12
1 page  
ESMT/EMP
Absolute Maximum Ratings
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation
ESD Susceptibility
Junction Temperature
6.0V
-65°C to +150°C
-0.3V to VDD +0.3V
Internally Limited
HBM 1.5KV
MM 200V
150°C
EMA2004
Thermal Resistance
θJA (MSOP)
θJA (TDFN)
Operating Ratings
Temperature Range
Supply Voltage
190°C/W
160°C/W
-40°C ≦ TA ≦ 85°C
2.2V ≦ VDD ≦ 5.5V
Electrical Characteristics VDD = 5V
The following specifications apply for VDD = 5V ,AV = 1 and RL=8Ω unless otherwise specified. Limits apply for TA = 25°C.
Symbol
Parameter
Conditions
Conditions
Typical
Limit
Units
IDD
ISD
VOS
PO
THD+N
PSRR
CMRR
Quiescent Power Supply Current
VIN = 0V, Io = 0A
Shutdown Current
Output offset voltage
VSDNB=GND
VI=0V differential, AV=1 V/V,
VDD = 5.5 V
5
0.1
1
Output Power
Total Harmonic
Distortion + Noise
Power Supply Rejection Ratio
Common Mode Rejection Ratio
THD+N = 10 %(max), f = 1kHz
RL = 4Ω
RL = 8Ω
THD+N = 1%(max), f = 1kHz
RL = 4Ω
RL = 8Ω
VDD = 3.6V, RL=8Ω, f = 1kHz
PO = 0.6 Wrms
PO= 0.25 Wrms
PO = 0.1 Wrms
V ripple=200mV sine p-p,
input ac-grounded
f=217Hz
f=20 to 20kHz
VDD = 3.6V, VIC=1VPP, f =
217Hz
2.7
1.7
2.1
1.4
0.007
0.01
0.017
-70
-65
60
8
1
5
mA
µA
mV
W
%
dB
dB
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Oct. 2010
Revision: 4.1
5/12
5 Page 
ESMT/EMP
Revision History
Revision
4.0
4.1
Date
2009.07.15
2010.10.07
Description
EMP transferred from version 3.1
Package dimension update
EMA2004
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Oct. 2010
Revision: 4.1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet EMA2004-50FF08NRR.PDF ] | |
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