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PDF EMA1903-50WL09GRR Data sheet ( Hoja de datos )
| Número de pieza | EMA1903-50WL09GRR | |
| Descripción | 1W Fully Differential Audio Power Amplifier | |
| Fabricantes | Elite Semiconductor | |
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ESMT/EMP
EMA1903
1W Fully Differential Audio Power Amplifier
with Shutdown Select
General Description
The EMA1903 is a fully differential audio power amplifier
primarily designed for demanding applications in
mobile phones and other portable communication
device applications. It is capable of delivering 1 watt of
continuous average power to an 8Ω BTL load with less
than 1% distortion (THD+N) from a 5VDC power supply.
The EMA1903 does not require output coupling
capacitors or bootstrap capacitors, and therefore is
ideally suited for mobile phone and other low voltage
applications where minimal power consumption is a
primary requirement.
The EMA1903 features a low-power consumption
shutdown mode. To facilitate this, shutdown may be
enabled by either logic high or low depending on
mode selection. Driving the shutdown mode pin either
high or low enables the shutdown select pin to be
driven in a likewise manner to enable Shutdown.
Additionally, the EMA1903 features an internal thermal
shutdown protection mechanism.
The EMA1903 contains advanced pop & click circuitry
which eliminates noises which would otherwise occur
during turn-on and turn-off transitions.
The EMA1903 is unity-gain stable and can be configured
by external gain-setting resistors.
Key Specifications
．Improved PSRR at 217Hz
．Power Output at 5.0V,8Ω & 1% THD
．Power Output at 2.6V,8Ω& 1% THD
．Shutdown current
70dB(typ)
1W(typ)
300mW(typ)
0.1µA (typ)
Features
．Available in space-saving WL-CSP package
．Fully differential amplification
．Ultra low current shutdown mode
．Can drive capacitive loads up to 500 pF
．Improved pop & click circuitry eliminates noises during
turn-on and turn-off transitions
．2.2 - 5.5V operation
．No output coupling capacitors, snubber networks or
bootstrap capacitors required
．Unity-gain stable
．External gain configuration capability
．Shutdown high or low selectivity
．High CMRR
Applications
． Mobile phones
． PDAs
． Portable electronic devices
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.0
1/11
1 page  
ESMT/EMP
Absolute Maximum Ratings
Supply Voltage
Storage Temperature
Input Voltage
Power Dissipation
ESD Susceptibility
Junction Temperature
6.0V
-65°C to +150°C
-0.3V to VDD +0.3V
Internally Limited
HBM 1.5KV
MM 200V
150°C
EMA1903
Thermal Resistance
θJA (WL-CSP)
Operating Ratings
Temperature Range
Supply Voltage
180°C/W
-40°C ≦ TA ≦ 85°C
2.2V ≦ VDD ≦ 5.5V
Electrical Characteristics VDD = 5V
The following specifications apply for VDD = 5V ,AV = 1 and RL = 8Ω unless otherwise specified. Limits apply for TA = 25°C.
Symbol
Parameter
Conditions
Conditions
Typical
Limit
Units
(Limits)
IDD
ISD
PO
THD+N
Quiescent Power Supply Current
Shutdown Current
Output Power
Total Harmonic
Distortion + Noise
VIN = 0V, Io = 0A
VSDNB=GND
THD = 1 %(max), f = 1kHz
PO = 0.4 Wrms ; f = 1kHz
1.6
0.1
1
0.008
4 mA (max)
1 µA (max)
0.9 W (min)
%
PSRR
CMRR
V ripple = 200mV sine p-p
Power Supply Rejection Ratio
f = 217Hz (Un-terminated input)
f = 1kHz (Un-terminated input)
f = 217Hz (10Ω terminated input)
f = 1kHz (10Ω terminated input)
Common Mode Rejection Ratio
f = 217Hz
73
73
70
70
64
dB
dB
Electrical Characteristics VDD = 2.6V
The following specifications apply for VDD = 2.6V,AV = 1 and RL = 8Ω unless otherwise specified. Limits apply for TA = 25°C.
Symbol
Parameter
Conditions
Conditions
Typical Limit
Units
(Limits)
IDD Quiescent Power Supply Current
VIN = 0V, Io = 0A
ISD
PO
THD+N
PSRR
CMRR
Shutdown Current
Output Power
Total Harmonic
Distortion + Noise
VSDNB=GND
THD = 1 %(max), f = 1kHz
RL = 4Ω
RL = 8Ω
PO = 0.3 Wrms ; f = 1kHz, 4Ω
PO = 0.25 Wrms ; f = 1kHz, 8Ω
V ripple = 200mV sine p-p
Power Supply Rejection Ratio
f = 217Hz (Un-terminated input)
f = 1kHz (Un-terminated input)
f = 217Hz (10Ω terminated input)
f = 1kHz (10Ω terminated input)
Common Mode Rejection Ratio
f = 217Hz
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
1.3 2 mA (max)
0.1 1 µA (max)
0.4
0.3
0.02
0.01
0.38 W (min)
0.28
%
73
73 dB
65
65
60 dB
Publication Date : May 2009
Revision : 2.0
5/11
5 Page 
ESMT/EMP
EMA1903
All rights reserved.
Important Notice
No part of this document may be reproduced or duplicated in any form or
by any means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at
the time of publication. ESMT assumes no responsibility for any error in this
document, and reserves the right to change the products or specification
in this document without notice.
The information contained herein is presented only as a guide or examples
for the application of our products. No responsibility is assumed by ESMT for
any infringement of patents, copyrights, or other intellectual property rights
of third parties which may result from its use. No license, either express ,
implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure.
To minimize risks associated with customer's application, adequate design
and operating safeguards against injury, damage, or loss from such failure,
should be provided by the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as,
but not limited to, life support devices or system, where failure or abnormal
operation may directly affect human lives or cause physical injury or
property damage. If products described here are to be used for such kinds
of application, purchaser must do its own quality assurance testing
appropriate to such applications.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.0
11/11
11 Page | ||
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